2N7000KL-TR1 datasheet(2/4 Pages) VISHAY

Part #	2N7000KL-TR1

Description	N-Channel 60-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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2N7000KL/BS170KL

Vishay Siliconix

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Document Number: 72705

S-40247—Rev. A, 16-Feb-04

SPECIFICATIONSa (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 10 mA

60

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

1

2.0

2.5

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "10 V

"1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V, TJ = 55_C

10

mA

On State Drain Currentb

ID( )

VGS = 10 V, VDS = 7.5 V

0.8

A

On-State Drain Currentb

ID(on)

VGS = 4.5 V, VDS = 10 V

0.5

A

Drain Source On Resistanceb

rDS( )

VGS = 10 V, ID = 0.5 A

1.1

2

W

Drain-Source On-Resistanceb

rDS(on)

VGS = 4.5 V, ID = 0.2 A

1.6

4

W

Forward Transconductanceb

gfs

VDS = 10 V, ID = 0.5 A

550

mS

Diode Forward Voltage

VSD

IS = 0.3 A, VGS = 0 V

0.87

1.3

V

Dynamicb

Total Gate Charge

Qg

0.4

0.6

Gate-Source Charge

Qgs

VDS = 10 V, VGS = 4.5 V

ID ^ 0.25 A

0.11

nC

Gate-Drain Charge

Qgd

ID ^ 0.25 A

0.15

Gate Resistance

Rg

173

W

Turn On Time

td(on)

3.8

10

Turn-On Time

tr

VDD = 30 V, RL = 150 W

ID ^ 02 A VGEN = 10V

4.8

15

ns

Turn-Off Time

td(off)

ID ^ 0.2 A, VGEN = 10V

Rg = 10 W

12.8

20

ns

Turn-Off Time

tf

g

9.6

15

Notes

a.

Pulse test: PW v300 ms duty cycle v2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.2

0.4

0.6

0.8

1.0

012345

0123456

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS = 10, 7 V

3 V

5 V

4 V

VGS − Gate-to-Source Voltage (V)

TJ = −55_C

125_C

25_C

6 V

1.2

0.9

0.6

0.3

0

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