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2N7000KL-TR1 Datasheet(PDF) 2 Page - Vishay Siliconix |
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2N7000KL-TR1 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page 2N7000KL/BS170KL Vishay Siliconix New Product www.vishay.com 2 Document Number: 72705 S-40247—Rev. A, 16-Feb-04 SPECIFICATIONSa (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 mA 60 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1 2.0 2.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "10 V "1 mA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 55_C 10 mA On State Drain Currentb ID( ) VGS = 10 V, VDS = 7.5 V 0.8 A On-State Drain Currentb ID(on) VGS = 4.5 V, VDS = 10 V 0.5 A Drain Source On Resistanceb rDS( ) VGS = 10 V, ID = 0.5 A 1.1 2 W Drain-Source On-Resistanceb rDS(on) VGS = 4.5 V, ID = 0.2 A 1.6 4 W Forward Transconductanceb gfs VDS = 10 V, ID = 0.5 A 550 mS Diode Forward Voltage VSD IS = 0.3 A, VGS = 0 V 0.87 1.3 V Dynamicb Total Gate Charge Qg 0.4 0.6 Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V ID ^ 0.25 A 0.11 nC Gate-Drain Charge Qgd ID ^ 0.25 A 0.15 Gate Resistance Rg 173 W Turn On Time td(on) 3.8 10 Turn-On Time tr VDD = 30 V, RL = 150 W ID ^ 02 A VGEN = 10V 4.8 15 ns Turn-Off Time td(off) ID ^ 0.2 A, VGEN = 10V Rg = 10 W 12.8 20 ns Turn-Off Time tf g 9.6 15 Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.0 0.2 0.4 0.6 0.8 1.0 012345 0123456 Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS = 10, 7 V 3 V 5 V 4 V VGS − Gate-to-Source Voltage (V) TJ = −55_C 125_C 25_C 6 V 1.2 0.9 0.6 0.3 0 |
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