K4H560838E-VCB3 datasheet(4/23 Pages) SAMSUNG

Part #	K4H560838E-VCB3

Description	256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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DDR SDRAM

DDR SDRAM 256Mb E-die (x4, x8) Pb-Free

Rev. 1.1 October, 2004

Pin Description

DM is internally loaded to match DQ and DQS identically.

Row & Column address configuration

Organization

Row Address

Column Address

64Mx4

A0~A12

A0-A9, A11

32Mx8

A0~A12

A0-A9

54pin sTSOP(II)-300

VDD

1

54 PinsTSOP(II)

300mil x 551mil

NC

2

VDDQ

3

DQ0

4

VSSQ

5

NC

6

VDDQ

7

DQ1

8

VSSQ

9

NC

10

VDDQ

11

NC

12

A3

20

A1

19

A0

18

AP/A10

17

BA1

16

BA0

15

WE

14

NC

13

CS

27

26

25

24

23

22

VDD

21

VSS

42

NC

41

VSSQ

40

DQ3

39

VDDQ

38

NC

37

VSSQ

36

DQ2

35

VDDQ

34

NC

33

VSSQ

32

DQS

31

A4

A7

A9

A11

CKE

28

DM

29

VREF

30

43

44

45

46

47

48

VSS

(0.5 mm Pin Pitch)

49

50

51

52

53

54

VDD

CAS

RAS

NC

A2

VSS

CK

A12

A8

A6

A5

64Mb x 4

32Mb x 8

VSS

DQ7

VSSQ

DQ6

VDDQ

DQ5

VSSQ

DQ4

VDDQ

NC

VSSQ

DQS

A4

A7

A9

A11

CKE

DM

VREF

VSS

CK

A12

A8

A6

A5

VDD

DQ0

VDDQ

DQ1

VSSQ

DQ2

VDDQ

DQ3

VSSQ

NC

VDDQ

NC

A3

A1

A0

AP/A10

BA1

BA0

WE

NC

CS

VDD

CAS

RAS

NC

A2

Bank Address

BA0-BA1

Row Address

A0-A12

Auto Precharge

A10

(7.62mm x 14.00mm)

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K4H560838E-VCB3 Datasheet(PDF) 4 Page - Samsung semiconductor

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