MC74HCU04A

http://onsemi.com

3

Guaranteed Limit

Unit

v 125_C

v 85_C

– 55 to

25

_C

VCC

V

Test Conditions

Parameter

Symbol

Iin

Maximum Input Leakage

Current

Vin = VCC or GND

6.0

± 0.1

± 1.0

± 1.0

µA

ICC

Maximum Quiescent Supply

Current (per Package)

Vin = VCC or GND

Iout = 0 µA

6.0

1

10

40

µA

NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).

*For VCC = 2.0 V, Vout = 0.2 V or VCC – 0.2 V.

Guaranteed Limit

Symbol

Parameter

VCC

V

– 55 to

25

_C

v 85_C

v 125_C

Unit

tPLH,

tPHL

Maximum Propagation Delay, Input A to Output Y

(Figures 1 and 2)

2.0

3.0

4.5

6.0

70

40

14

12

90

45

18

15

105

50

21

18

ns

tTLH,

tTHL

Maximum Output Transition Time, Any Output

(Figures 1 and 2)

2.0

3.0

4.5

6.0

75

27

15

13

95

32

19

16

110

36

22

19

ns

Cin

Maximum Input Capacitance

—

10

10

10

pF

NOTES:

1. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).

2. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).

Typical @ 25

°C, VCC = 5.0 V

CPD

Power Dissipation Capacitance (Per Inverter)*

15

pF

* Used to determine the no–load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the

ON Semiconductor High–Speed CMOS Data Book (DL129/D).