MC74HC589A

http://onsemi.com

2

MAXIMUM RATINGS*

Symbol

Parameter

Value

Unit

VCC

DC Supply Voltage (Referenced to GND)

– 0.5 to + 7.0

V

Vin

DC Input Voltage (Referenced to GND)

– 0.5 to VCC + 0.5

V

Vout

DC Output Voltage (Referenced to GND)

– 0.5 to VCC + 0.5

V

Iin

DC Input Current, per Pin

± 20

mA

Iout

DC Output Current, per Pin

± 35

mA

ICC

DC Supply Current, VCC and GND Pins

± 75

mA

PD

Power Dissipation in Still Air,

Plastic DIP†

SOIC Package†

TSSOP Package†

750

500

450

mW

Tstg

Storage Temperature

– 65 to + 150

_C

TL

Lead Temperature, 1 mm from Case for 10 Seconds

(Plastic DIP, SOIC or TSSOP Package)

260

_C

*Maximum Ratings are those values beyond which damage to the device may occur.

Functional operation should be restricted to the Recommended Operating Conditions.

†Derating — Plastic DIP: – 10 mW/

_C from 65_ to 125_C

SOIC Package: – 7 mW/

_C from 65_ to 125_C

TSSOP Package: – 6.1 mW/

_C from 65_ to 125_C

For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

Max

Unit

VCC

DC Supply Voltage (Referenced to GND)

2.0

6.0

V

Vin, Vout

DC Input Voltage, Output Voltage (Referenced to GND)

0

VCC

V

TA

Operating Temperature, All Package Types

– 55

+ 125

_C

tr, tf

Input Rise and Fall Time

VCC = 2.0 V

VCC = 3.0 V

(Figure 1)

VCC = 4.5 V

VCC = 6.0 V

0

0

0

1000

TBD

500

400

ns

Guaranteed Limit

Symbol

Parameter

Test Conditions

VCC

V

– 55 to

25

_C

v 85_C

v 125_C

Unit

VIH

Minimum High–Level Input

Voltage

Vout = 0.1 V or VCC – 0.1 V

|Iout| v 20 µA

2.0

3.0

4.5

6.0

1.5

2.1

3.15

4.2

1.5

2.1

3.15

4.2

1.5

2.1

3.15

4.2

V

VIL

Maximum Low–Level Input

Voltage

Vout = 0.1 V or VCC – 0.1 V

|Iout| v 20 µA

2.0

3.0

4.5

6.0

0.5

0.9

1.35

1.8

0.5

0.9

1.35

1.8

0.5

0.9

1.35

1.8

V

VOH

Minimum High–Level Output

Voltage

Vin = VIH or VIL

|Iout| v 20 µA

2.0

4.5

6.0

1.9

4.4

5.9

1.9

4.4

5.9

1.9

4.4

5.9

V

Vin = VIH or VIL |Iout| v 2.4 mA

|Iout| v 6.0 mA

|Iout| v 7.8 mA

3.0

4.5

6.0

2.48

3.98

5.48

2.34

3.84

5.34

2.20

3.70

5.20

VOL

Maximum Low–Level Output

Voltage

Vin = VIH

|Iout| v 20 µA

2.0

4.5

6.0

0.1

0.1

0.1

0.1

0.1

0.1

0.1

0.1

0.1

V

Vin = VIH or VIL |Iout| v 2.4 mA

|Iout| v 6.0 mA

|Iout| v 7.8 mA

3.0

4.5

6.0

0.26

0.26

0.26

0.33

0.33

0.33

0.40

0.40

0.40

Iin

Maximum Input Leakage

Current

Vin = VCC or GND

6.0

± 0.1

± 1.0

± 1.0

µA

This device contains protection

circuitry to guard against damage

due to high static voltages or electric

fields. However, precautions must

be taken to avoid applications of any

voltage higher than maximum rated

voltages to this high–impedance cir-

cuit. For proper operation, Vin and

Vout should be constrained to the

range GND

v (Vin or Vout) v VCC.

Unused inputs must always be

tied to an appropriate logic voltage

level (e.g., either GND or VCC).

Unused outputs must be left open.