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HX6228KERC Datasheet(PDF) 3 Page - Honeywell Solid State Electronics Center |
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HX6228KERC Datasheet(HTML) 3 Page - Honeywell Solid State Electronics Center |
3 / 12 page HX6228 3 Total Dose ≥1x106 rad(SiO 2) Transient Dose Rate Upset (3) ≥1x1011 rad(Si)/s Transient Dose Rate Survivability ≥1x1012 rad(Si)/s Soft Error Rate <1x10-10 upsets/bit-day Neutron Fluence ≥1x1014 N/cm2 Parameter Limits (2) Test Conditions RADIATION HARDNESS RATINGS (1) The SRAM will meet any functional or electrical specifica- tion after exposure to a radiation pulse up to the transient dose survivability specification,when applied under recom- mended operating conditions. Note that the current con- ducted during the pulse by the RAM inputs, outputs, and power supply may significantly exceed the normal operat- ing levels. The application design must accommodate these effects. Neutron Radiation The SRAM will meet any functional or timing specification after exposure to the specified neutron fluence under recommended operating or storage conditions. This as- sumes an equivalent neutron energy of 1 MeV. Soft Error Rate The SRAM is capable of meeting the specified Soft Error Rate (SER), under recommended operating conditions. This hardness level is defined by the Adams 90% worst case cosmic ray environment for geosynchronous orbits. Latchup The SRAM will not latch up due to any of the above radiation exposure conditions when applied under recommended operating conditions. Fabrication with the SIMOX sub- strate material provides oxide isolation between adjacent PMOS and NMOS transistors and eliminates any potential SCR latchup structures. Sufficient transistor body tie con- nections to the p- and n-channel substrates are made to ensure no source/drain snapback occurs. Total Ionizing Radiation Dose The SRAM will meet all stated functional and electrical specifications over the entire operating temperature range after the specified total ionizing radiation dose. All electrical and timing performance parameters will remain within specifications after rebound at VDD = 5.5 V and T =125 °C extrapolated to ten years of operation. Total dose hardness is assured by wafer level testing of process monitor transis- tors and RAM product using 10 KeV X-ray and Co60 radiation sources. Transistor gate threshold shift correla- tions have been made between 10 KeV X-rays applied at a dose rate of 1x105 rad(SiO 2)/min at T = 25°C and gamma rays (Cobalt 60 source) to ensure that wafer level X-ray testing is consistent with standard military radiation test environments. Transient Pulse Ionizing Radiation The SRAM is capable of writing, reading, and retaining stored data during and after exposure to a transient ionizing radiation pulse up to the specified transient dost rate upset specification, when applied under recommended operat- ing conditions. To ensure validity of all specified perfor- mance parameters before, during, and after radiation (tim- ing degradation during transient pulse radiation is ≤20%), it is suggested that stiffening capacitance be placed on or near the package VDD and VSS, with a maximum induc- tance between the package (chip) and stiffening capaci- tance of 0.7 nH per part. If there are no operate-through or valid stored data requirements, typical circuit board mounted de-coupling capacitors are recommended. Units (1) Device will not latch up due to any of the specified radiation exposure conditions. (2) Operating conditions (unless otherwise specified): VDD=4.5 V to 5.5 V, -55 °C to 125°C. (3) Applies to 40-lead flat pack only. Assume ≥1x1009 rad(Si))/s for 32-lead flat pack. Stiffening capacitance is suggested for optimum expected dose rate upset performance as stated above. TA=125 °C, Adams 90% worst case environment Pulse width ≤50 ns, X-ray, VDD=6.0 V, TA=25 °C Pulse width ≤1 µs TA=25 °C 1 MeV equivalent energy, Unbiased, TA=25 °C RADIATION CHARACTERISTICS |
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