IXTQ36N50P datasheet(1/5 Pages) IXYS

Part #	IXTQ36N50P

Description	N-Channel Enhancement Mode

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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G = Gate

D = Drain

S = Source

TAB = Drain

DS99228(11/04)

PolarHVTM

Power MOSFET

IXTQ 36N50P

V

DSS

= 500

V

IXTT 36N50P

I

D25

=

36

A

R

DS(on)

≤≤≤≤≤ 170 mΩ

Ω

Advanced Technical Information

N-Channel Enhancement Mode

Features

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

TO-268 (IXTT)

G

S

D (TAB)

TO-3P (IXTQ)

G

D

S

D (TAB)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min. Typ.

Max.

V

DSS

V

GS

= 0 V, I

D = 250 μA

500

V

GS(th)

V

DS

= V

GS, ID = 250μA

2.5

5.0

V

I

GSS

V

GS

=

±30 V

DC, VDS = 0

±100

nA

I

DSS

V

DS

= V

DSS

25

μA

V

GS = 0 V

T

J = 125°C

250

μA

R

DS(on)

V

GS

= 10 V, I

D = 0.5 ID25

170

m

Ω

Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

500

V

GSS

±20

V

GSM

±30

V

I

D25

T

C

= 25

°C36

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

100

A

I

AR

T

C

= 25

°C36

A

E

AR

T

C

= 25

°C50

mJ

E

AS

T

C

= 25

°C

1.5

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,

10

V/ns

T

J

≤ 150°C, R

G = 4 Ω

P

D

T

C

= 25

°C

500

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

Plastic body

250

°C

M

d

Mounting torque

(TO-3P)

1.13/10 Nm/lb.in.

Weight

TO-3P

5.5

g

TO-268

5.0

g

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