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FDSS2407 Datasheet(PDF) 5 Page - Fairchild Semiconductor

Part No. FDSS2407
Description  N-Channel Dual MOSFET
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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 5 page
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FDSS2407 Rev. A
www.fairchildsemi.com
5
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics (Continued) T
A = 25°C unless otherwise noted
0.1
1
10
100
110
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
TJ = MAX RATED
TA = 25
oC
SINGLE PULSE
LIMITED BY rDS(ON)
AREA MAY BE
OPERATION IN THIS
10ms
100
µs
1ms
RθJA = 55
oC/W
1
10
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
STARTING TJ = 25
oC
STARTING TJ = 150
oC
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R = 0
If R
≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
0
5
10
15
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
TJ = 150
oC
TJ = 25
oC
TJ = -55
oC
0
5
10
15
0
0.5
1.0
1.5
2.0
2.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 5V
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
VGS = 3.5V
VGS = 3V
VGS = 10V
TA = 25
oC
90
120
150
180
210
240
24
68
10
ID = 1A
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 3.3A
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (
oC)
VGS = 10V, ID = 3.3A
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX




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