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FDSS2407 Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part No. FDSS2407
Description  N-Channel Dual MOSFET
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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 3 page
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FDSS2407 Rev. A
www.fairchildsemi.com
3
Switching Characteristics (V
GS = 10V)
Drain-Source Diode Characteristics
Drain Feedback Characteristics
Gate Drive Disable Characteristics
Notes:
1. Starting TJ = 25°C, L = 42mH, IAS = 2.6A, VDD = 62V, VGS = 10V.
2. 55oC/W measured using FR-4 board with 0.50 in2 (323 mm2) copper pad at 1 second.
3. 180oC/W measured using FR-4 board with 0.027 in2 (17.4 mm2) copper pad at 1000 seconds.
4. 200oC/W measured using FR-4 board with 0.006 in2 (3.87 mm2) copper pad at 1000 seconds.
tON
Turn-On Time
VDD = 30V, ID = 3.3A
VGS = 10V, RGS = 47Ω
-
-
2700
ns
td(ON)
Turn-On Delay Time
-
630
-
ns
tr
Rise Time
-
1200
-
ns
td(OFF)
Turn-Off Delay Time
-
8700
-
ns
tf
Fall Time
-
3500
-
ns
tOFF
Turn-Off Time
-
-
18500
ns
VSD
Source to Drain Diode Voltage
ISD = 3.3A
-
-
1.25
V
ISD = 1.7A
-
-
1.0
V
trr
Reverse Recovery Time
ISD = 3.3A, dISD/dt = 100A/µs-
-
45
ns
QRR
Reverse Recovered Charge
ISD = 3.3A, dISD/dt = 100A/µs-
-
60
nC
VFBK(Low) Feedback to Source Voltage
VDS = 35V, RFBK-SOURCE =51KΩ
-1
1.5
V
VFBK(High) Feedback to Source Voltage
VDS = 62V, RFBK-SOURCE =51KΩ
3.5
4.4
-
V
VDIS(High)
Gate Drive Disable Input Voltage, Gate
Enabled
VGS = 5V, ID = 3.0A, TJ=25
oC3
-
-
V
VDIS(Low)
Gate Drive Disable Input Voltage, Gate
Disabled
VGS = VDS = 10V, ID ≤ 250µA,
TJ=150
oC
--
0.4
V
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.




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