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FDS6299S Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDS6299S Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page July 2005 ©2005 Fairchild Semiconductor Corporation FDS6299S Rev C (W) FDS6299S 30V N-Channel PowerTrench ® SyncFET ™ General Description The FDS6299S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6299S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode. Applications • Synchronous Rectifier for DC/DC Converters – • Notebook Vcore low side switch • Point of load low side switch Features • 21 A, 30 V. RDS(ON) = 3.9 mΩ @ VGS = 10 V RDS(ON) = 5.1 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • High performance trench technology for extremely low RDS(ON) and fast switching • High power and current handling capability • 100% R G (Gate Resistance) tested • Termination is Lead-free and RoHS Compliant S D S S SO-8 D D D G 4 3 2 1 5 6 7 8 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V Drain Current – Continuous (Note 1a) 21 ID – Pulsed 105 A Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 PD (Note 1c) 1 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6299S FDS6299S 13’’ 12mm 2500 units |
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