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FDS4410A Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FDS4410A Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page 4 www.fairchildsemi.com FDS4410A Rev. B Typical Characteristics 0 2 4 6 8 10 05 10 15 20 25 Qg,GATECHARGE (nC) ID =10 A VDS =10V 20V 15V 0 400 800 1200 1600 05 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Ciss Crss Coss f=1MHz VGS =0 V Figure7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 VDS,DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms RDS(ON) LIMIT V GS =10V SINGLE PULSE R JA =125 oC/W TA =25 oC 10ms 1ms 100 µs 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t1,TIME (sec) SINGLE PULSE R JA =125 °C/W TA =25 °C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1,TIM E(sec) SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D= 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the cir cuit board design. RθJA (t) = r(t) * RθJA RθJA = 125 °C/W TJ - TA = P * Rθ θ JA (t) Duty Cycle, D = t1/t2 P(pk) t1 t2 θ |
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