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FDMA1027P Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDMA1027P Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 6 page  October 2005 ©2005 Fairchild Semiconductor Corporation FDMA1027P Rev C1 (W) FDMA1027P Dual P-Channel PowerTrench ® MOSFET General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications. Features • –3.0 A, –20V. R DS(ON) = 120 mΩ @ VGS = –4.5V RDS(ON) = 160 mΩ @ VGS = –2.5V RDS(ON) = 240 mΩ @ VGS = –1.8V • Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm 3 2 1 4 5 6 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±8 V Drain Current – Continuous (Note 1a) –2.2 ID – Pulsed –6 A Power Dissipation for Single Operation (Note 1a) 1.4 PD (Note 1b) 0.7 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 86 (Single Operation) RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 173 (Single Operation) RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 69 (Dual Operation) RθJA Thermal Resistance, Junction-to-Ambient (Note 1d) 151 (Dual Operation) °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 027 FDMA1027P 7 in 8 mm 3000 units MicroFET S1 G1 D1 S2 G2 D2 PIN 1 S1 G1 D2 D1 G2 S2 D1 D2 |
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