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FDA59N25 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDA59N25 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  2 www.fairchildsemi.com FDA59N25 Rev. A Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.67mH, IAS = 59A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 59A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDA59N25 FDA59N25 TO-3P -- -- 30 Symbol Parameter Conditions Min. Typ. Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 250 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C-- 0.25 -- V/ °C IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V VDS = 200V, TC = 125°C -- -- -- -- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 29.5A -- 0.041 0.049 Ω gFS Forward Transconductance VDS = 40V, ID = 29.5A (Note 4) -- 45 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 3090 4020 pF Coss Output Capacitance -- 630 820 pF Crss Reverse Transfer Capacitance -- 70 110 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 125V, ID = 59A RG = 25Ω (Note 4, 5) -- 70 150 ns tr Turn-On Rise Time -- 480 970 ns td(off) Turn-Off Delay Time -- 90 190 ns tf Turn-Off Fall Time -- 170 350 ns Qg Total Gate Charge VDS = 200V, ID = 59A VGS = 10V (Note 4, 5) -- 63 82 nC Qgs Gate-Source Charge -- 18.5 -- nC Qgd Gate-Drain Charge -- 30 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 59 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 236 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 59A -- -- 1.4 V trr Reverse Recovery Time VGS = 0V, IS = 59A dIF/dt =100A/µs (Note 4) -- 190 -- ns Qrr Reverse Recovery Charge -- 4.4 -- µC |
Similar Part No. - FDA59N25 |
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Similar Description - FDA59N25 |
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