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M5M5V216AWG-55HW Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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M5M5V216AWG-55HW Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 7 page  MITSUBISHI ELECTRIC M5M5V216AWG revision-01, ' 98.12.08 2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM MITSUBISHI LSIs FUNCTION TABLE 2 FUNCTION The M5M5V216AWG is organized as 131,072-words by 16-bit. These devices operate on a single +2.7~3.6V power supply, and are directly TTL compatible to both input and output. Its fully static circuit needs no clocks and no refresh, and makes it useful. The operation mode are determined by a combination of the device control inputs BC1 , BC2 , S , W and OE. Each mode is summarized in the function table. A write operation is executed whenever the low level W overlaps with the low level BC1 and/or BC2 and the low level S. The address(A0~A16) must be set up before the write cycle and must be stable during the entire cycle. A read operation is executed by setting W at a high level and OE at a low level while BC1 and/or BC2 and S are in an active state(S=L). When setting BC1 at the high level and other pins are in an active stage , upper-byte are in a selesctable mode in which both reading and writing are enabled, and lower-byte are in a non-selectable mode. And when setting BC2 at a high level and other pins are in an active stage, lower- byte are in a selectable mode and upper-byte are in a non-selectable mode. When setting BC1 and BC2 at a high level or S at a high level, the chips are in a non-selectable mode in which both reading and writing are disabled. In this mode, the output stage is in a high-impedance state, allowing OR-tie with other chips and memory expansion by BC1, BC2 and S. The power supply current is reduced as low as 0.3µA(25 C, typical), and the memory data can be held at +2V power supply, enabling battery back-up operation during power failure or power-down operation in the non-selected mode. BLOCK DIAGRAM Mode S W H X X High-Z S BC1 BC2 OE DQ1~8 X X Non selection DQ9~16 Icc High-Z Standby High-Z High-Z L X L L H Din High-Z Active L H L H Read High-Z Dout Active L L H L Active L H L Active L L High-Z High-Z Active H L H H High-Z L L Dout H L L Read Dout Active L L Din L L X Write Din Active H High-Z H H High-Z High-Z Non selection H H X X Standby Write L H L L Write Din Active X L L H Read High-Z Active L Dout H High-Z MEMORY ARRAY 131072 WORDS x 16 BITS CLOCK GENERATOR A0 A1 A15 A16 S BC1 BC2 W OE DQ 8 DQ 1 DQ 16 DQ 9 - Vcc GND L |
Similar Part No. - M5M5V216AWG-55HW |
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Similar Description - M5M5V216AWG-55HW |
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