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SI7991DP Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI7991DP Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si7991DP Vishay Siliconix New Product www.vishay.com 2 Document Number: 72515 S-32127—Rev. B, 27-Oct-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA −1 −3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = −30 V, VGS = 0 V −1 mA Zero Gate Voltage Drain Current IDSS VDS = −30 V, VGS = 0 V, TJ = 55_C −5 mA On-State Drain Currenta ID(on) VDS v −5 V, VGS = −10 V −30 A Drain Source On State Resistancea rDS( ) VGS = −10 V, ID = −10.0 A 0.019 0.023 W Drain-Source On-State Resistancea rDS(on) VGS = −4.5 V, ID = −8.2 A 0.027 0.035 W Forward Transconductancea gfs VDS = −15 V, ID = −10.0 A 22 S Diode Forward Voltagea VSD IS = −2.9 A, VGS = 0 V −0.8 −1.2 V Dynamicb Total Gate Charge Qg 38 57 Gate-Source Charge Qgs VDS = −15 V, VGS = −10 V, ID = −10.0 A 6.3 nC Gate-Drain Charge Qgd 9.7 Gate Resistance Rg f = 1 MHz 10 W Turn-On Delay Time td(on) 10 15 Rise Time tr VDD = −15 V, RL = 15 W 15 25 Turn-Off Delay Time td(off) VDD = −15 V, RL = 15 W ID ^ −1 A, VGEN = −10 V, RG = 6 W 130 200 ns Fall Time tf 70 105 Source-Drain Reverse Recovery Time trr IF = −2.9 A, di/dt = 100 A/ms 45 70 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 6 12 18 24 30 0 1234 5 VGS = 10 thru 4 V TC = 125_C −55_C 3 V 25_C Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) |
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