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SI6993DQ-T1 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI6993DQ-T1 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Si6993DQ Vishay Siliconix New Product Document Number: 72369 S-31912—Rev. A, 15-Sep-03 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 400 800 1200 1600 2000 0 5 10 15 20 25 30 0.60 0.80 1.00 1.20 1.40 1.60 -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 0 3 6 9 12 15 0.00 0.02 0.04 0.06 0.08 0.10 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Crss VDS = 15 V ID = 4.7 A ID - Drain Current (A) VGS = 10 V ID = 4.7 A Gate Charge On-Resistance vs. Drain Current Qg - Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ - Junction Temperature (_C) 0.0 0.3 0.6 0.9 1.2 1.5 0.00 0.03 0.06 0.09 0.12 0.15 0 2468 10 TJ = 25_C ID = 4.7 A 30 10 0.1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) VGS = 4.5 V TJ = 150_C VGS = 10 V Coss Ciss 1 |
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