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MRF5P20180HR6 Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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MRF5P20180HR6 Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 12 page MRF5P20180HR6 1 RF Device Data Freescale Semiconductor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. • Typical 2-carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 2 x 800 mA, Pout = 38 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14 dB Drain Efficiency — 26% IM3 @ 10 MHz Offset — -37.5 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — -41 dBc @ 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW Output Power • Characterized with Series Equivalent Large-Signal Impedance Parameters • Internally Matched, Controlled Q, for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS -0.5, +65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 530 3.0 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C CW Operation CW 120 W Table 2. Thermal Characteristics Characteristic Symbol Value (1) Unit Thermal Resistance, Junction to Case Case Temperature 77°C, 120 W CW Case Temperature 72°C, 38 W CW RθJC 0.33 0.35 °C/W 1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. MRF5P20180HR6 Rev. 0, 12/2004 Freescale Semiconductor Technical Data MRF5P20180HR6 1990 MHz, 38 W AVG., 28 V 2 x W-CDMA LATERAL N-CHANNEL RF POWER MOSFET CASE 375D-05, STYLE 1 NI-1230 Freescale Semiconductor, Inc., 2004. All rights reserved. |
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