MRF5P20180HR6

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for W-CDMA base station applications with frequencies from 1930

to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

To be used in Class AB for PCN-PCS/cellular radio and WLL applications.

3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 14 dB

Drain Efficiency — 26%

IM3 @ 10 MHz Offset — -37.5 dBc @ 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — -41 dBc @ 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW

Output Power

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched, Controlled Q, for Ease of Use

• Integrated ESD Protection

• Lower Thermal Resistance Package

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

-0.5, +65

Vdc

Gate-Source Voltage

-0.5, +15

Vdc

Derate above 25°C

530

3.0

W

W/°C

Storage Temperature Range

- 65 to +150

°C

Operating Junction Temperature

200

°C

CW Operation

CW

120

W

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Case Temperature 77°C, 120 W CW

Case Temperature 72°C, 38 W CW

0.33

0.35

°C/W

1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF5P20180HR6

Rev. 0, 12/2004

Freescale Semiconductor

Technical Data

MRF5P20180HR6

1990 MHz, 38 W AVG., 28 V

2 x W-CDMA

LATERAL N-CHANNEL

RF POWER MOSFET

CASE 375D-05, STYLE 1

NI-1230

 Freescale Semiconductor, Inc., 2004. All rights reserved.