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RN4991 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # RN4991
Description  Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Download  6 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN4991 Datasheet(HTML) 3 Page - Toshiba Semiconductor

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RN4991
2001-06-07
3
Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
―
VCB = 50V, IE = 0
―
―
100
nA
Emitter cut-off current
IEBO
―
VEB = 5V, IC = 0
―
―
100
mA
DC current gain
hFE
―
VCE = 5V, IC = 1mA
120
―
700
―
Collector-emitter saturation voltage
VCE (sat)
―
IC = 5mA, IB = 0.25mA
―
0.1
0.3
V
Transition frequency
fT
―
VCE = 10V, IC = 5mA
―
250
―
MHz
Collector output capacitance
Cob
―
VCB = 10V, IE = 0, f = 1 MHz
―
3
6
pF
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
―
VCB = −50V, IE = 0
―
―
−100
nA
Emitter cut-off current
IEBO
―
VEB = −5V, IC = 0
―
―
−100
mA
DC current gain
hFE
―
VCE = −5V, IC = −1mA
120
―
400
―
Collector-emitter saturation voltage
VCE (sat)
―
IC = −5mA, IB = −0.25mA
―
−0.1
−0.3
V
Transition frequency
fT
―
VCE = −10V, IC = −5mA
―
200
―
MHz
Collector output capacitance
Cob
―
VCB = −10V, IE = 0, f = 1MHz
―
3
6
pF
Q1, Q2 Common Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Input resistor
R1
―
―
7
10
13
kΩ


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