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MC33102P Datasheet(PDF) 4 Page - ON Semiconductor |
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MC33102P Datasheet(HTML) 4 Page - ON Semiconductor |
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4 / 14 page  MC33102 4 MOTOROLA ANALOG IC DEVICE DATA AC ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = –15 V, TA = 25°C, unless otherwise noted.) Characteristics Figure Symbol Min Typ Max Unit Slew Rate (Vin = –5.0 V to +5.0 V, CL = 50 pF, AV = 1.0) Sleepmode (RL = 1.0 MΩ) Awakemode (RL = 600 Ω) 18 SR 0.10 1.0 0.16 1.7 — — V/ µs Gain Bandwidth Product Sleepmode (f = 10 kHz) Awakemode (f = 20 kHz) 19 GBW 0.25 3.5 0.33 4.6 — — MHz Sleepmode to Awakemode Transition Time (ACL = 0.1, Vin = 0 V to +5.0 V) RL = 600 Ω RL = 10 kΩ 20, 21 ttr1 — — 4.0 15 — — µs Awakemode to Sleepmode Transition Time 22 ttr2 — 1.5 — sec Unity Gain Frequency (Open Loop) Sleepmode (RL = 100 kΩ, CL = 0 pF) Awakemode (RL = 600 Ω, CL = 0 pF) fU — — 200 2500 — — kHz Gain Margin Sleepmode (RL = 100 kΩ, CL = 0 pF) Awakemode (RL = 600 Ω, CL = 0 pF) 23, 25 AM — — 13 12 — — dB Phase Margin Sleepmode (RL = 100 kΩ, CL = 0 pF) Awakemode (RL = 600 Ω, CL = 0 pF) 24, 26 ∅M — — 60 60 — — Degrees Channel Separation (f = 100 Hz to 20 kHz) Sleepmode and Awakemode 29 CS — 120 — dB Power Bandwidth (Awakemode) (VO = 10 Vpp, RL = 100 kΩ, THD ≤ 1%) BWP — 20 — kHz Total Harmonic Distortion (VO = 2.0 Vpp, AV = 1.0) Awakemode (RL = 600 Ω) f = 1.0 kHz f = 10 kHz f = 20 kHz 30 THD — — — 0.005 0.016 0.031 — — — % DC Output Impedance (VO = 0 V, AV = 10, IQ = 10 µA) Sleepmode Awakemode 31 RO — — 1.0 k 96 — — Ω Differential Input Resistance (VCM = 0 V) Sleepmode Awakemode Rin — — 1.3 0.17 — — M Ω Differential Input Capacitance (VCM = 0 V) Sleepmode Awakemode Cin — — 0.4 4.0 — — pF Equivalent Input Noise Voltage (f = 1.0 kHz, RS = 100 Ω) Sleepmode Awakemode 32 en — — 28 9.0 — — nV/ Hz √ Equivalent Input Noise Current (f = 1.0 kHz) Sleepmode Awakemode 33 in — — 0.01 0.05 — — pA/ Hz √ |
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