© Semiconductor Components Industries, LLC, 2000

November, 2000 – Rev. 1

1

Publication Order Number:

MMBF0202PLT1/D

MMBF0202PLT1

Preferred Device

Power MOSFET

300 mAmps, 20 Volts

P–Channel SOT–23

These miniature surface mount MOSFETs low RDS(on) assure

minimal power loss and conserve energy, making these devices ideal

for use in small power management circuitry. Typical applications are

dc–dc converters, power management in portable and

battery–powered products such as computers, printers, PCMCIA

cards, cellular and cordless telephones.

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

20

Vdc

Gate–to–Source Voltage – Continuous

VGS

± 20

Vdc

Drain Current

– Continuous @ TA = 25°C

– Continuous @ TA = 70°C

– Pulsed Drain Current (tp ≤ 10 µs)

ID

ID

IDM

300

240

750

mAdc

Total Power Dissipation @ TA = 25°C

(Note 1.)

PD

225

mW

Operating and Storage Temperature

Range

TJ, Tstg

– 55 to

150

°C

Thermal Resistance – Junction–to–Ambient

R

θJA

625

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8

″ from case for 10

seconds

TL

260

°C

1. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

3

1

2

Device

Package

Shipping

ORDERING INFORMATION

MMBF0202PLT1

SOT–23

3000 Tape & Reel

P–Channel

SOT–23

CASE 318

STYLE 21

http://onsemi.com

W

MARKING

DIAGRAM

P3

W

= Work Week

PIN ASSIGNMENT

3

2

1

Drain

Gate

2

1

3

Source

300 mAMPS

20 VOLTS

RDS(on) = 1.4 W

Preferred devices are recommended choices for future use

and best overall value.