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STS2320 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STS2320 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 7 page 20 N-Channel Enhancement Mode Field Effect Transistor Oct .29 2004 V1.1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS V Gate-Source Voltage VGS V Drain Current-Continuous @TJ=25 C -Pulsed ID 3.6 A A A W IDM 14 Drain-Source Diode Forward Current IS 1.25 Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ, TSTG -55 to 150 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient RthJA 100 /W C STS2320 1.25 a a a a b G D S SOT-23 S G D 1 SamHop Microelectronics Corp. PRODUCT SUMMARY VDSS ID RDS(ON) ( m W ) Max 20V 3.6A 45@ VGS = 4.5V 65@ VGS =2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package. 10 |
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