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STS1C1S250 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STS1C1S250
Description  N-CHANNEL 250V - 0.9Ohm - 0.75A SO-8 P-CHANNEL 250V - 2.1Ohm - 0.6A SO-8 MESH OVERLAY POWER MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STS1C1S250 Datasheet(HTML) 3 Page - STMicroelectronics

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STS1C1S250
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
(4) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(5) Pulse width limited by safe operating area
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability,
but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In
this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
N-CHANNEL
VDD =125V, ID = 1.5A
RG = 4.7Ω VGS =10V
P-CHANNEL
VDD =125V, ID = 1.5A
RG = 4.7Ω VGS =10V
(Resistive, see Figure 3)
n-ch
p-ch
n-ch
p-ch
9
12
11
22
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
N-CHANNEL
VDD =200V, ID=1.5A,
VGS =10V
P-CHANNEL
VDD =200V, ID= 1.5A,
VGS =10V
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
15
16
1.9
1.4
7
7.6
20
21
nC
nC
nC
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
N-CHANNEL
VDD = 125V, ID = 1.5A,
RG =4.7Ω, VGS = 10V
P-CHANNEL
VDD = 200V, ID = 1.5A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
n-ch
p-ch
n-ch
p-ch
31
29.5
11
7
ns
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (4)
Source-drain Current
Source-drain Current (pulsed)
n-ch
p-ch
n-ch
p-ch
0.75
0.6
3
2.4
A
A
A
A
VSD (5)
Forward On Voltage
ISD = 3A, VGS =0
ISD = 3A, VGS =0
n-ch
p-ch
1.5
1.5
V
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Curren
N-CHANNEL
ISD = 0.8A, di/dt = 100A/µs,
VDD =50V, Tj = 150°C
P-CHANNEL
ISD = 0.60A, di/dt = 100A/µs,
VDD =40V, Tj = 150°C
(see test circuit, Figure 5)
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
127
143
450
806
7
11
ns
ns
nC
nC
A
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-Source Breakdown
Voltage
Igs=± 500 µA (Open Drain)
± 25
V


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