Electronic Components Datasheet Search |
|
STS1C1S250 Datasheet(PDF) 3 Page - STMicroelectronics |
|
STS1C1S250 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 10 page 3/10 STS1C1S250 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE GATE-SOURCE ZENER DIODE (4) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (5) Pulse width limited by safe operating area PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time N-CHANNEL VDD =125V, ID = 1.5A RG = 4.7Ω VGS =10V P-CHANNEL VDD =125V, ID = 1.5A RG = 4.7Ω VGS =10V (Resistive, see Figure 3) n-ch p-ch n-ch p-ch 9 12 11 22 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge N-CHANNEL VDD =200V, ID=1.5A, VGS =10V P-CHANNEL VDD =200V, ID= 1.5A, VGS =10V n-ch p-ch n-ch p-ch n-ch p-ch 15 16 1.9 1.4 7 7.6 20 21 nC nC nC nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time N-CHANNEL VDD = 125V, ID = 1.5A, RG =4.7Ω, VGS = 10V P-CHANNEL VDD = 200V, ID = 1.5A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) n-ch p-ch n-ch p-ch 31 29.5 11 7 ns ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (4) Source-drain Current Source-drain Current (pulsed) n-ch p-ch n-ch p-ch 0.75 0.6 3 2.4 A A A A VSD (5) Forward On Voltage ISD = 3A, VGS =0 ISD = 3A, VGS =0 n-ch p-ch 1.5 1.5 V V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Curren N-CHANNEL ISD = 0.8A, di/dt = 100A/µs, VDD =50V, Tj = 150°C P-CHANNEL ISD = 0.60A, di/dt = 100A/µs, VDD =40V, Tj = 150°C (see test circuit, Figure 5) n-ch p-ch n-ch p-ch n-ch p-ch 127 143 450 806 7 11 ns ns nC nC A A Symbol Parameter Test Conditions Min. Typ. Max. Unit BVGSO Gate-Source Breakdown Voltage Igs=± 500 µA (Open Drain) ± 25 V |
Similar Part No. - STS1C1S250 |
|
Similar Description - STS1C1S250 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |