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M12S16161A-10TG Datasheet(PDF) 11 Page - Elite Semiconductor Memory Technology Inc. |
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M12S16161A-10TG Datasheet(HTML) 11 Page - Elite Semiconductor Memory Technology Inc. |
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11 / 28 page  ESMT M12S16161A Elite Semiconductor Memory Technology Inc. Publication Date : Jun. 2005 Revision : 1.0 11/28 Single Bit Read-Write-Read Cycle (Same Page) @CAS Latency=3, Burst Length=1 : D o n ' t C a r e 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 CL OC K CK E CS RA S CA S AD DR WE DQ DQ M A1 0 / A P t CH t CL t CC Ro w A c t i v e BA *Note1 HIGH t RCD t SS t SS t SH t SH t SS t SH t SS t SS t SH t SS t SS t SH Ra Ca Cb Cc Rb BS BS BS BS BS BS Ra Qa Db Qc Rb Re a d Wr i t e Re a d P r echar ge Ro w A c t i ve t RC t RA S t RP t CCD t RA C *Note2 *Note2,3 *Note4 *Note2 *Note2,3 *Note 3 *Note 3 *Note2,3 t SH t SL Z t SA C t OH t SH t SH t SS *Note4 *Note 3 |
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