PF08134B datasheet(8/14 Pages) RENESAS

Part #	PF08134B

Description	MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone

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Manufacturer	RENESAS [Renesas Technology Corp]

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PF08134B

Rev.1.01, May 13, 2004, page 8 of 13

GSM mode (824 MHz to 849 MHz) (cont.)

36

35

31

32

33

34

–8

–6

–4

–2

02468

GSM mode (824 MHz) Pout vs. Pin (Temperature variation)

Input power Pin (dBm)

Vapc = 2.2 V

37

31

32

34

33

35

36

650

700

750

800

850

900

950

GSM mode Pout, Eff vs. f

Frequency f (MHz)

55

30

35

40

45

50

Pin = 0 dBm

Vdd = 3.5 V

Tc = 25

°C

Pout : Vapc = 2.2 V

Eff : Pout = 33.5 dBm

10

0.01

0.1

1

–50 –40 –30 –20 –10

10

0

203040

GSM mode (824 MHz) Idd vs. Pout

Output power Pout (dBm)

Pin = 0 dBm

Vdd = 3.5 V

Vapc = control

Tc = 25

°C

10

0.01

0.1

1

–50 –40 –30 –20 –10

10

020

30

40

GSM mode (849 MHz) Idd vs. Pout

Output power Pout (dBm)

Pin = 0 dBm

Vdd = 3.5 V

Vapc = control

Tc = 25

°C

38

33

34

35

36

37

GSM mode Pout vs. Vdd

3.1

Supply voltage Vdd (V)

3.3

3.5

3.7

3.9

4.1

4.3

4.5

36

31

33

32

34

35

–8

–6

–4

–2

0

2

4

6

8

GSM mode (849 MHz) Pout vs. Pin (Temperature variation)

Input power Pin (dBm)

Vapc = 2.2 V

Pout

849 MHz

824 MHz

Vdd = 3.1 V, Tc = 85

°C

Vdd = 3.5 V, Tc = 25

°C

Vdd = 3.5 V

Tc = 25

°C

Pout : Vapc = 2.2 V

Eff : Pout = 33.5 dBm

Eff

Vdd = 3.1 V, Tc = 85

°C

Vdd = 3.5 V, Tc = 85

°C

Vdd = 3.5 V, Tc = 25

°C

Vdd = 3.5 V, Tc = 85

°C

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