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M5M564R16DTP-10 Datasheet(PDF) 6 Page - Mitsubishi Electric Semiconductor |
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M5M564R16DTP-10 Datasheet(HTML) 6 Page - Mitsubishi Electric Semiconductor |
6 / 7 page M5M564R16DJ,TP-10,-12,-15 MITSUBISHI LSIs 1048576-BIT (65536-WORD BY 16-BIT) CMOS STATIC RAM MITSUBISHI ELECTRIC Write cycle (W control mode) A 0~15 W S t CW OE tsu(S) tsu(A) (Note 7) (Note 7) tw(W) tsu(A-WH) VIH VIL VIH VIL VIH VIL VIH VIL Note 7: Hatching indicates the state is don't care. 8: When the falling edge of W is simultaneous or prior to the falling edge of S, the output is maintained in the high impedance. 9: ten,tdis are periodically sampled and are not 100% tested. LB,UB VIH VIL Note 6. Addresses , S and OE valid prior to LB,UB transition low by (ta(A)-ta(B)), (ta(S)-ta(B)), (ta(OE)-ta(B)). Read cycle 4 (Note 6) UB,LB ta(B) W=H S=L ten(B) tdis(B) UNKNOWN DATA VALID VOH VOL DQ1~16 VIH VIL (Note 4) t CR (Note 4) OE=L tsu(B) (Note 7) (Note 7) DQ1~16 tdis(OE) ten(OE) ten(W) tdis(W) DQ1~16 (Output Data) (Input Data) (Note 4) Hi-Z VIH VIL VOH VOL trec(W) tsu(D) th(D) DATA STABLE 6 (Note 4) |
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