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MBRD660CTG Datasheet(PDF) 2 Page - ON Semiconductor

Part # MBRD660CTG
Description  SWITCHMODE Power Rectifiers
Download  6 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MBRD660CTG Datasheet(HTML) 2 Page - ON Semiconductor

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MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MBRD
Unit
Rating
Symbol
620CT
630CT
640CT
650CT
660CT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
30
40
50
60
V
Average Rectified Forward Current
Per Diode
TC = 130°C (Rated VR)
Per Device
IF(AV)
3
6
A
Peak Repetitive Forward Current, TC = 130°C
(Rated VR, Square Wave, 20 kHz) Per Diode
IFRM
6
A
Nonrepetitive Peak Surge Current − (Surge applied at rated load
conditions halfwave, single phase, 60 Hz)
IFSM
75
A
Peak Repetitive Reverse Surge Current (2
ms, 1 kHz)
IRRM
1
A
Operating Junction Temperature
TJ
−65 to +150
°C
Storage Temperature
Tstg
−65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/
ms
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not
implied, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS PER DIODE
Maximum Thermal Resistance − Junction−to−Case
RqJC
6
°C/W
Maximum Thermal Resistance − Junction−to−Ambient (Note 1)
RqJA
80
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE
Maximum Instantaneous Forward Voltage (Note 2)
iF = 3 Amps, TC = 25°C
iF = 3 Amps, TC = 125°C
iF = 6 Amps, TC = 25°C
iF = 6 Amps, TC = 125°C
VF
0.7
0.65
0.9
0.85
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 25°C)
(Rated dc Voltage, TC = 125°C)
iR
0.1
15
mA
1. Rating applies when surface mounted on the minimum pad size recommended.
2. Pulse Test: Pulse Width = 300
ms, Duty Cycle ≤ 2.0%.


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