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K6R1008C1D-KC10 Datasheet(PDF) 1 Page - Samsung semiconductor |
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K6R1008C1D-KC10 Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 9 page PRELIMINARY Rev. 3.0 - 1 - July 2004 PRELIMINARY K6R1004V1D CMOS SRAM for AT&T Document Title 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. Revision History The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques- tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. Rev.No. Rev. 0.0 Rev. 0.1 Rev. 0.2 Rev. 1.0 Rev. 2.0 Rev. 3.0 Remark Preliminary Preliminary Preliminary Final Final Final History Initial document. Speed bin modify Current modify 1. Final datasheet release 2. Delete 12ns speed bin. 3. Change Icc for Industrial mode. 1. Delete UB,LB releated timing diagram. 1. Add the Lead Free Package type. Item Previous Current ICC(Industrial) 8ns 100mA 90mA 10ns 85mA 75mA Draft Data May. 11. 2001 June. 18. 2001 September. 9. 2001 December. 18. 2001 June. 19. 2002 July. 26, 2004 |
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