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IS42LS81600A-10TI Datasheet(PDF) 1 Page - Integrated Circuit Solution Inc

Part # IS42LS81600A-10TI
Description  16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
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Manufacturer  ICSI [Integrated Circuit Solution Inc]
Direct Link  http://www.icsi.com.tw
Logo ICSI - Integrated Circuit Solution Inc

IS42LS81600A-10TI Datasheet(HTML) 1 Page - Integrated Circuit Solution Inc

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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
1
ADVANCEDINFORMATION,Rev. 00A
08/01/02
Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any
time without notice.
ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are
advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
IS42S81600A, IS42LS81600A
IS42S16800A, IS42LS16800A
IS42S32400A, IS42LS32400A
ISSI®
FEATURES
• Clock frequency: 133 100, MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Internal bank for hiding row access/precharge
• Power supply
VDD
VDDQ
IS42LS81600A
2.5V
1.8V (2.5V tolerant)
IS42LS16800A
2.5V
1.8V (2.5V tolerant)
IS42LS32400A
2.5V
1.8V (2.5V tolerant)
IS42S81600A
3.3V
3.3V
IS42S16800A
3.3V
3.3V
IS42S32400A
3.3V
3.3V
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• Extended Mode Register
• Programmable Power Reduction Feature by
partial array activation during Self-Refresh
• Auto Refresh (CBR)
• Temp. Compensated Self Refresh.
• Self Refresh with programmable refresh periods
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable
CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
operations capability
• Burst termination by burst stop and precharge
command
• Industrial Temperature Availability
OVERVIEW
ISSI's 128Mb Synchronous DRAM achieves high-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer
to the rising edge of the clock
input.The 128Mb SDARM is organized as follows.
16Meg x 8, 8Meg x16 & 4Meg x 32
128-MBIT SYNCHRONOUS DRAM
ADVANCED INFORMATION
AUGUST 2002
KEY TIMING PARAMETERS
Parameter
-7
-10
Unit
Clk Cycle Time
CAS Latency = 3
7
10
ns
CAS Latency = 2
10
10
ns
Clk Frequency
CAS Latency = 3
133
100
Mhz
CAS Latency = 2
100
100
Mhz
Access Time from Clock
CAS Latency = 3
5.4
7
ns
CAS Latency = 2
6
9
ns
Row to Column Delay Time (tRCD)
1518ns
Row Precharge Tim (tRP)
1518ns
IS42LS81600A
IS42LS16800A
IS42LS32400A
IS42S81600A
IS42S16800A
IS42S32400A
4M x8x4 Banks
2M x16x4 Banks
2M x16x4 Banks
54pin TSOPII
54ball FBGA
90ball FBGA
54 pin TSOPII
86pin TSOPII


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