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K6T8016C3M-TF55 Datasheet(PDF) 3 Page - Samsung semiconductor |
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K6T8016C3M-TF55 Datasheet(HTML) 3 Page - Samsung semiconductor |
3 / 9 page K6T8016C3M Family Revision 1.01 April 2000 3 CMOS SRAM PRODUCT LIST Commercial Temperature Products(0~70 °C) Industrial Temperature Products(-40~85 °C) Part Name Function Part Name Function K6T8016C3M-TB55 K6T8016C3M-TB70 K6T8016C3M-RB55 K6T8016C3M-RB70 44-TSOP2-F, 55ns, Low Low Power 44-TSOP2-F, 70ns, Low Low Power 44-TSOP2-R, 55ns, Low Low Power 44-TSOP2-R, 70ns, Low Low Power K6T8016C3M-TF55 K6T8016C3M-TF70 K6T8016C3M-RF55 K6T8016C3M-RF70 44-TSOP2-F, 55ns, Low Low Power 44-TSOP2-F, 70ns, Low Low Power 44-TSOP2-R, 55ns, Low Low Power 44-TSOP2-R, 70ns, Low Low Power ABSOLUTE MAXIMUM RATINGS1) 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Item Symbol Ratings Unit Remark Voltage on any pin relative to Vss VIN,VOUT -0.5 to VCC+0.5V V - Voltage on Vcc supply relative to Vss VCC -0.3 to 7.0 V - Power Dissipation PD 1.0 W - Storage temperature TSTG -65 to 150 °C - Operating Temperature TA 0 to 70 °C K6T8016C3M-B -40 to 85 °C K6T8016C3M-F FUNCTIONAL DESCRIPTION Note: X means don ′t care. (Must be low or high state) CS OE WE LB UB I/O1~8 I/O9~16 Mode Power H X X X X High-Z High-Z Deselected Standby L H H X X High-Z High-Z Output Disabled Active L X X H H High-Z High-Z Output Disabled Active L L H L H Dout High-Z Lower Byte Read Active L L H H L High-Z Dout Upper Byte Read Active L L H L L Dout Dout Word Read Active L X L L H Din High-Z Lower Byte Write Active L X L H L High-Z Din Upper Byte Write Active L X L L L Din Din Word Write Active |
Similar Part No. - K6T8016C3M-TF55 |
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Similar Description - K6T8016C3M-TF55 |
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