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NE851M33 Datasheet(PDF) 2 Page - California Eastern Labs

Part # NE851M33
Description  NECs NPN SILICON TRANSISTOR
Download  6 Pages
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Manufacturer  CEL [California Eastern Labs]
Direct Link  http://www.cel.com
Logo CEL - California Eastern Labs

NE851M33 Datasheet(HTML) 2 Page - California Eastern Labs

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NE851M33
ELECTRICAL CHARACTERISTICS (TA=+25ºC)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
–
–
600
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
–
–
600
nA
DC Current Gain
hFE Note 1
VCE = 1 V, IC = 5 mA
100
120
145
–
RF Characteristics
Gain Bandwidth Product (1)
fT
VCE = 1 V, IC = 5 mA, f = 2 GHz
3.0
4.5
–
GHz
Gain Bandwidth Product (2)
fT
VCE = 1 V, IC = 15 mA, f = 2 GHz
5.0
6.5
–
GHz
Insertion Power Gain (1)
|S21e|2
VCE = 1 V, IC = 5 mA, f = 2 GHz
3.0
4.0
–
dB
Insertion Power Gain (2)
|S21e|2
VCE = 1 V, IC = 15 mA, f = 2 GHz
4.5
5.5
–
dB
Noise Figure
NF
VCE = 1 V, IC = 10 mA, f = 2 GHz,
ZS = Zopt
–
1.9
2.5
dB
Reverse Transfer Capacitance
Cre Note 2
VCB = 0.5 V, IC = 0 mA, f = 1 MHz
–
0.6
0.8
pF
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
RANK
FB
Marking
E7
hFE Value
100 to 145


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