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NE851M33 Datasheet(PDF) 2 Page - California Eastern Labs |
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NE851M33 Datasheet(HTML) 2 Page - California Eastern Labs |
2 / 6 page NE851M33 ELECTRICAL CHARACTERISTICS (TA=+25ºC) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA – – 600 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA – – 600 nA DC Current Gain hFE Note 1 VCE = 1 V, IC = 5 mA 100 120 145 – RF Characteristics Gain Bandwidth Product (1) fT VCE = 1 V, IC = 5 mA, f = 2 GHz 3.0 4.5 – GHz Gain Bandwidth Product (2) fT VCE = 1 V, IC = 15 mA, f = 2 GHz 5.0 6.5 – GHz Insertion Power Gain (1) |S21e|2 VCE = 1 V, IC = 5 mA, f = 2 GHz 3.0 4.0 – dB Insertion Power Gain (2) |S21e|2 VCE = 1 V, IC = 15 mA, f = 2 GHz 4.5 5.5 – dB Noise Figure NF VCE = 1 V, IC = 10 mA, f = 2 GHz, ZS = Zopt – 1.9 2.5 dB Reverse Transfer Capacitance Cre Note 2 VCB = 0.5 V, IC = 0 mA, f = 1 MHz – 0.6 0.8 pF Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION RANK FB Marking E7 hFE Value 100 to 145 |
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