NE698M01-T1 datasheet(6/8 Pages) NEC

Part #	NE698M01-T1

Description	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION

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Manufacturer	NEC [NEC]

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FREQUENCY

S11

S21

S12

S22

K

MAG1

f (MHz)

MAG

ANG

MAG

ANG

MAG

ANG

MAG

ANG

(dB)

100

0.910

-5.49

7.711

170.42

0.006

85.31

0.983

-4.58

0.15

31.2

200

0.903

-12.15

7.507

165.89

0.012

79.32

0.975

-8.86

0.15

28.0

300

0.886

-18.46

7.391

159.88

0.017

74.51

0.962

-13.10

0.19

26.3

400

0.867

-23.84

7.277

153.86

0.022

71.17

0.949

-17.19

0.21

25.1

500

0.844

-29.82

7.211

148.01

0.027

67.27

0.932

-21.20

0.24

24.2

600

0.818

-35.35

7.024

142.43

0.031

63.60

0.913

-24.97

0.28

23.5

700

0.789

-40.72

6.842

136.76

0.035

59.99

0.893

-28.57

0.33

22.9

800

0.758

-46.19

6.679

131.59

0.038

56.72

0.873

-31.93

0.37

22.4

900

0.727

-51.33

6.479

126.49

0.041

53.71

0.853

-35.20

0.41

21.9

1000

0.696

-56.23

6.281

121.67

0.044

51.05

0.833

-38.24

0.45

21.6

1200

0.632

-66.19

5.923

112.11

0.047

46.49

0.796

-44.05

0.54

21.0

1400

0.573

-75.35

5.541

103.48

0.050

43.02

0.763

-49.33

0.64

20.5

1600

0.519

-84.27

5.162

95.39

0.051

40.54

0.735

-54.29

0.74

20.1

1800

0.465

-93.54

4.858

87.66

0.051

39.26

0.711

-59.16

0.85

19.8

2000

0.421

-102.59

4.554

80.30

0.051

38.93

0.692

-63.82

0.96

19.5

2200

0.387

-112.30

4.244

73.46

0.051

39.56

0.679

-68.35

1.06

17.7

2400

0.355

-122.55

3.999

66.73

0.051

41.72

0.667

-73.12

1.16

16.5

2600

0.331

-133.20

3.771

60.20

0.051

44.53

0.659

-77.85

1.25

15.7

2800

0.317

-144.52

3.554

53.94

0.052

48.11

0.656

-82.78

1.30

15.1

3000

0.309

-156.20

3.363

47.78

0.054

52.26

0.655

-87.66

1.31

14.6

3500

0.328

177.03

2.911

33.02

0.065

60.65

0.668

-100.67

1.19

13.9

4000

0.383

156.43

2.518

19.22

0.082

64.68

0.692

-113.87

0.98

14.9

4500

0.451

142.11

2.167

6.57

0.104

64.38

0.723

-126.63

0.77

13.2

5000

0.527

130.35

1.864

-4.78

0.126

61.60

0.737

-136.90

0.64

11.7

TYPICAL SCATTERING PARAMETERS (TA = 25°C)

VCE = 2 V, Ic = 3 mA

Coordinates in Ohms

Frequency in GHz

(VCE = 2 V, IC = 3 mA)

Note:

1. Gain Calculations:

MAG = Maximum Available Gain

MSG = Maximum Stable Gain

MAG =

|S21|

|S12|

K - 1

).

2

(K ±

∆ = S11 S22 - S21 S12

When K

≤ 1, MAG is undefined and MSG values are used. MSG = |S

21

|

|S12|

, K = 1 + | ∆ | - |S

11

| - |S22|

2

2 |S12 S21|

,

S11

1 GHz

j50

j25

j10

0

-j10

-j25

-j50

-j100

j100

0

10

25

50

100

S22

5 GHz

S11

5 GHz

S22

1 GHz

120˚

90˚

30˚

150˚

180˚

-150˚

-120˚

-90˚

-60˚

-30˚

0˚

S12

5 GHz

S21

1 GHz

60˚

S12

1 GHz

S21

5 GHz

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