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NT511740D0J-5L Datasheet(PDF) 9 Page - List of Unclassifed Manufacturers

Part # NT511740D0J-5L
Description  The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology.
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NT511740D0J-5L Datasheet(HTML) 9 Page - List of Unclassifed Manufacturers

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NT511740D0J
16MEG : x4
Fast Page Mode DRAM
REV 1.0 , JULY. 2000
9
© NANYA TECHNOLOGY CORP.
NAYNA TECHNOLOGY CORP. reserves the right to change products and specifications without notice.
NOTES
1. An initial pause of 200us is required after power-up followed by any 8 RAS -only refresh or CAS -before- RAS refresh
Cycles before proper device operation is achieved.
2.
VIH(min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between
VIH (min) and VIL (max) and are assumed to be 5ns for all inputs.
3. Measured with a load equivalent to 2 TTL(5V) loads and 100pF.
4. Operation within the t RCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point
only. If tRCD is greater than the specified tRCD (max) limit, then access time is controlled exclusively by tCAC.
5. Assumes that tRCD >= tRCD(max).
6.
tOFF(min) and tOEZ(max) define the time at which the output achieves the open circuit condition and is not referenced to
VOH or VOL.
7.
tWCS, tRWD, tCWD and tAWD are non restrictive operating parameters. They are included in the data sheet as electrical
characteristics only. If tWCS >= tWCS(min), the cycle is an early write cycle and the data output will remain high
impedance for the duration of the cycle. If tCWD >= tCWD(min), tRWD >= tRWD(min) and tAWD >= tAWD(min), then
the cycle is a read-modify-write cycle and the data output will contain the data read from the selected address. If neither of
the above conditions is satisfied, the condition of the data out is indeterminate.
8. Either tRCH or tRRH must be satisfied for a read cycle.
9. These parameters are referenced to CAS falling edge in early write cycles and to W falling edge in read-modify-write
controlled write cycles.
10. Operation within the tRAD (max) limit insures that tRAD(max) can be met. tRAD(max) is specified as a reference point
only. If tRAD is greater than the specified tRAD(max) limit, then access time is controlled by tAA .
11. If tRASS >= 100us, then RAS precharge time must use tRPS instead of tRP.
12. For RAS-only refresh and burst CAS -before- RAS refresh mode, 2048(2K) cycles of burst refresh must be executed
within 32ms before and after self refresh, in order to meet refresh specification..
13. For distributed CAS -before- RAS with 15.6us interval CAS -before- RAS refresh should be executed with in 15.6us
immediately before and after self refresh in order to meet refresh specification.


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