EDS1232AATA-60-E datasheet(5/53 Pages) ELPIDA

Part #	EDS1232AATA-60-E

Description	128M bits SDRAM (4M words x 32 bits)

Download	53 Pages

Scroll/Zoom	100%

Manufacturer	ELPIDA [Elpida Memory]

Direct Link	http://www.elpida.com/en

Logo

5 / 53 page

EDS1232AATA

Data Sheet E0386E40 (Ver. 4.0)

5

DC Characteristics 1 (TA = 0 to +70

°°°°C, VDD, VDDQ = 3.3V±±±±0.3V, VSS, VSSQ = 0V)

Parameter

/CAS latency

Symbol

Grade

max.

Unit

Test condition

Notes

Operating current

(CL = 2)

IDD1

-60

-75

120

105

mA

1

(CL = 3)

IDD1

-60

-75

120

105

mA

Burst length = 1

tRC

≥ tRC (min.)

IO = 0mA

One bank active

Standby current in power down

IDD2P

1

mA

Standby current in power down

(input signal stable)

IDD2PS

1

mA

CKE

≤ VIL (max.) tCK = 15ns

CKE

≤ VIL (max.) tCK = ∞

Standby current in non power

down

IDD2N

20

mA

CKE

≥ VIH (min.) tCK = 15ns

CS

≥ VIH (min.)

Input signals are changed one

time during 30ns

Standby current in non power

down

(input signal stable)

IDD2NS

8

mA

CKE

≥ VIH (min.) tCK = ∞

Active standby current in power

down

IDD3P

5

mA

CKE

≤ VIL (max.) tCK = 15ns

Active standby current in power

down (input signal stable)

IDD3PS

4

mA

CKE

≤ VIL (max.), tCK = ∞

Active standby current in non

power down

IDD3N

25

mA

CKE

≥ VIH (min.), tCK = 15 ns,

/CS

≥ VIH (min.),

Input signals are changed one

time during 30ns.

Active standby current in non

power down

(input signal stable)

IDD3NS

15

mA

CKE

≥ VIH (min.), tCK = ∞,

Burst operating current

IDD4

-60

-75

200

180

mA

tCK

≥ tCK (min.),

IO = 0mA, All banks active

2

Refresh current

IDD5

-60

-75

240

210

mA

tRC

≥ tRC (min.)

3

Self refresh current

IDD6

2.0

mA

VIH

≥ VDD − 0.2V,

VIL

≤ GND + 0.2V

Self refresh current

(L-version)

IDD6

-xxL

0.6

mA

Notes: 1. IDD1 depends on output loading and cycle rates. Specified values are obtained with the output open. In

addition to this, IDD1 is measured condition that addresses are changed only one time during tCK (min.).

2. IDD4 depends on output loading and cycle rates. Specified values are obtained with the output open.

In addition to this, IDD4 is measured condition that addresses are changed only one time during tCK

(min.).

3. IDD5 is measured on condition that addresses are changed only one time during tCK (min.).

DC Characteristics 2 (TA = 0 to +70

°°°°C, VDD, VDDQ = 3.3V±±±±0.3V, VSS, VSSQ = 0V)

Parameter

Symbol

min.

max.

Unit

Test condition

Note

Input leakage current

ILI

–1.0

1.0

µA

0

≤ VIN ≤ VDDQ, VDDQ = VDD,

All other pins not under test = 0V

Output leakage current

ILO

–1.5

1.5

µA

0

≤ VIN ≤ VDDQ, DOUT is disabled

Output high voltage

VOH

2.4

—

V

IOH = –2 mA

Output low voltage

VOL

—

0.4

V

IOL = 2 mA

Similar Part No. - EDS1232AATA-60-E

Manufacturer	Part #	Datasheet	Description
Elpida Memory	EDS1232AATA-60-E	644Kb / 53P	128M bits SDRAM

More results

Similar Description - EDS1232AATA-60-E

Manufacturer	Part #	Datasheet	Description
Elpida Memory	EDS1232AASE	581Kb / 53P	128M bits SDRAM (4M words x 32 bits)
	EDS1232CASE	720Kb / 53P	128M bits SDRAM (4M words x 32 bits)
	EDD1232AAFA	601Kb / 50P	128M bits DDR SDRAM (4M words x 32 bits)
	EDD1232AABH	621Kb / 50P	128M bits DDR SDRAM (4M words x 32 bits)
	EDS1216AABH	712Kb / 49P	128M bits SDRAM (8M words x 16 bits)
	EDS6416AHTA	696Kb / 49P	64M bits SDRAM (4M words x 16 bits)
	EDS6416AHBH	716Kb / 49P	64M bits SDRAM (4M words x 16 bits)
	EDD1216AATA	569Kb / 49P	128M bits DDR SDRAM (8M words x 16 bits)
	EDS6432AFTA	704Kb / 49P	64M bits SDRAM (2M words x 32 bits)
	EDD1216AASE	582Kb / 49P	128M bits DDR SDRAM (8M words x 16 bits)

More results

EDS1232AATA-60-E Datasheet(PDF) 5 Page - Elpida Memory

EDS1232AATA-60-E Datasheet(HTML) 5 Page - Elpida Memory

Similar Part No. - EDS1232AATA-60-E

Similar Description - EDS1232AATA-60-E

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53

Datasheet Download

Link URL