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EDS1216CABH-75-E Datasheet(PDF) 5 Page - Elpida Memory

Part # EDS1216CABH-75-E
Description  128M bits SDRAM (8M words x 16 bits)
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Manufacturer  ELPIDA [Elpida Memory]
Direct Link  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

EDS1216CABH-75-E Datasheet(HTML) 5 Page - Elpida Memory

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EDS1216AABH, EDS1216CABH
Data Sheet E0410E40 (Ver. 4.0)
5
DC Characteristics 1 (TA = 0 to +70
°C, VDD, VDDQ = 3.3V ± 0.3V, VSS, VSSQ = 0V) [EDS1216AA]
(TA = 0 to +70
°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V) [EDS1216CA]
EDS1216AA
EDS1216CA
Parameter
Symbol
Grade
max.
max.
Unit
Test condition
Notes
Operating current
IDD1
100
100
mA
Burst length = 1
tRC = tRC (min.)
1, 2, 3
Standby current in power
down
IDD2P
3
3
mA
CKE = VIL,
tCK = tCK (min.)
6
Standby current in power
down (input signal stable)
IDD2PS
2
2
mA
CKE = VIL, tCK =
∞
7
Standby current in non power
down
IDD2N
20
20
mA
CKE, /CS = VIH,
tCK = tCK (min.)
4
Standby current in non power
down (input signal stable)
IDD2NS
9
9
mA
CKE = VIH, tCK =
∞,
/CS = VIH
8
Active standby current in
power down
IDD3P
4
4
mA
CKE = VIL,
tCK = tCK (min.)
1, 2, 6
Active standby current in
power down (input signal
stable)
IDD3PS
3
3
mA
CKE = VIL, tCK =
∞
2, 7
Active standby current in non
power down
IDD3N
40
40
mA
CKE, /CS = VIH,
tCK = tCK (min.)
1, 2, 4
Active standby current in non
power down (input signal
stable)
IDD3NS
25
25
mA
CKE = VIH, tCK =
∞,
/CS = VIH
2, 8
Burst operating current
IDD4
120
120
mA
tCK = tCK (min.),
BL = 4
1, 2, 5
Refresh current
IDD5
220
220
mA
tRC = tRC (min.)
3
Self refresh current
IDD6
1.5
1.5
mA
VIH ≥ VDD – 0.2V
VIL ≤ 0.2V
Notes: 1. IDD depends on output load condition when the device is selected. IDD (max.) is specified at the output
open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CLK operating current.
7. After power down mode, no CLK operating current.
8. Input signals are VIH or VIL fixed.


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