EDS1216AABH datasheet(9/49 Pages) ELPIDA

Part #	EDS1216AABH

Description	128M bits SDRAM (8M words x 16 bits)

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Manufacturer	ELPIDA [Elpida Memory]

Direct Link	http://www.elpida.com/en

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EDS1216AABH, EDS1216CABH

Data Sheet E0410E40 (Ver. 4.0)

9

Relationship Between Frequency and Minimum Latency

Frequency (MHz)

133

100

tCK (ns)

Symbol

7.5

10

Unit

Notes

Active command to column command

(same bank)

lRCD

3

2

tCK

1

Active command to active command

(same bank)

lRC

9

7

tCK

1

Active command to precharge command

(same bank)

lRAS

6

5

tCK

1

Precharge command to activecommand

(same bank)

lRP

3

2

tCK

1

Write recovery or data-in to precharge

command (same bank)

lDPL

2

tCK

1

Active command to active command

(different bank)

lRRD

2

tCK

1

Self refresh exit time

lSREX

1

tCK

2

Last data in to active command

(Auto precharge, same bank)

lDAL

5

4

tCK

= [lDPL + lRP]

Self refresh exit to command input

lSEC

9

7

tCK

= [lRC]

3

Precharge command to high impedance

(CL = 2)

lHZP

—

2

tCK

(CL = 3)

lHZP

3

tCK

Last data out to active command

(Auto precharge, same bank)

lAPR

1

tCK

Last data out to precharge (early

precharge)

(CL = 2)

lEP

—

–1

tCK

(CL = 3)

lEP

–2

tCK

Column command to column command

lCCD

1

tCK

Write command to data in latency

lWCD

0

tCK

DQM to data in

lDID

0

tCK

DQM to data out

lDOD

2

tCK

CKE to CLK disable

lCLE

1

tCK

Register set to active command

lMRD

2

tCK

/CS to command disable

lCDD

0

tCK

Power down exit to command input

lPEC

1

tCK

Notes: 1. lRCD to lRRD are recommended value.

2. Be valid [DESL] or [NOP] at next command of self refresh exit.

3. Except [DESL] and [NOP]

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EDS1216AABH Datasheet(PDF) 9 Page - Elpida Memory

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