EDD2508AKTA-5B datasheet(5/48 Pages) ELPIDA

Part #	EDD2508AKTA-5B

Description	256M bits DDR SDRAM (32M words x 8 bits, DDR400)

Download	48 Pages

Scroll/Zoom	100%

Manufacturer	ELPIDA [Elpida Memory]

Direct Link	http://www.elpida.com/en

Logo

5 / 48 page

EDD2508AKTA-5

Preliminary Data Sheet E0349E60 (Ver. 6.0)

5

DC Characteristics 1 (TA = 0 to +70

°C, VDD, VDDQ = 2.6V ± 0.1V, VSS, VSSQ = 0V)

max.

Parameter

Symbol

Grade

× 8

Unit

Test condition

Notes

Operating current (ACT-PRE)

IDD0

-5B

-5C

110

100

mA

CKE ≥ VIH,

tRC = tRC (min.)

1, 2, 9

Operating current

(ACT-READ-PRE)

IDD1

-5B

-5C

140

130

mA

CKE ≥ VIH, BL = 4,CL = 3,

tRC = tRC (min.)

1, 2, 5

Idle power down standby current

IDD2P

3

mA

CKE ≤ VIL

4

Floating idle standby current

IDD2F

30

mA

CKE ≥ VIH, /CS ≥ VIH

DQ, DQS, DM = VREF

4, 5

Quiet idle standby current

IDD2Q

25

mA

CKE ≥ VIH, /CS ≥ VIH

DQ, DQS, DM = VREF

4, 10

Active power down standby current

IDD3P

20

mA

CKE ≤ VIL

3

Active standby current

IDD3N

60

mA

CKE ≥ VIH, /CS ≥ VIH

tRAS = tRAS (max.)

3, 5, 6

Operating current

(Burst read operation)

IDD4R

200

mA

CKE ≥ VIH, BL = 2, CL = 3

1, 2, 5, 6

Operating current

(Burst write operation)

IDD4W

210

mA

CKE ≥ VIH, BL = 2,CL = 3

1, 2, 5, 6

Auto Refresh current

IDD5

170

mA

tRFC = tRFC (min.),

Input ≤ VIL or ≥ VIH

Self refresh current

IDD6

3

mA

Input ≥ VDD – 0.2 V

Input ≤ 0.2 V

Operating current

(4 banks interleaving)

IDD7A

320

mA

BL = 4

1, 5, 6, 7

Notes: 1. These IDD data are measured under condition that DQ pins are not connected.

2. One bank operation.

3. One bank active.

4. All banks idle.

5. Command/Address transition once per one clock cycle.

6. DQ, DM and DQS transition twice per one clock cycle.

7. 4 banks active. Only one bank is running at tRC = tRC (min.)

8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.

9. Command/Address transition once every two clock cycle.

10. Command/Address stable at ≥ VIH or ≤ VIL.

DC Characteristics 2 (TA = 0 to +70

°C, VDD, VDDQ = 2.6V ± 0.1V, VSS, VSSQ = 0V)

Parameter

Symbol

min.

max.

Unit

Test condition

Note

Input leakage current

ILI

–2

2

µA

VDD ≥ VIN ≥ VSS

Output leakage current

ILO

–5

5

µA

VDDQ ≥ VOUT ≥ VSS

Output high current

IOH

–15.2

—

mA

VOUT = 1.95V

Output low current

IOL

15.2

—

mA

VOUT = 0.35V

Similar Part No. - EDD2508AKTA-5B

Manufacturer	Part #	Datasheet	Description
Elpida Memory	EDD2508AKTA-5B-E	551Kb / 48P	256M bits DDR SDRAM (32M words x 8 bits, DDR400)

More results

Similar Description - EDD2508AKTA-5B

Manufacturer	Part #	Datasheet	Description
Elpida Memory	EDD2508AKTA-5-E	551Kb / 48P	256M bits DDR SDRAM (32M words x 8 bits, DDR400)
	EDD2516AKTA-5-E	558Kb / 48P	256M bits DDR SDRAM (16M words x16 bits, DDR400)
	EDD2516AKTA-E	564Kb / 49P	256M bits DDR SDRAM (16M words x 16 bits)
	EDD2504AKTA-E	555Kb / 49P	256M bits DDR SDRAM (64M words x 4 bits)
	EDD1216AATA-5	556Kb / 48P	128M bits DDR SDRAM (8M words x 16 bits, DDR400)
	EDD2504AKTA	441Kb / 49P	256M bits DDR SDRAM (64M words x 4 bits)
	EDD2516KCTA-SI	579Kb / 52P	256M bits DDR SDRAM 256M bits DDR SDRAM
	EDS2516ADTA-75	702Kb / 50P	256M bits SDRAM (16M words x 16 bits)
	EDS2516CDTA	703Kb / 50P	256M bits SDRAM (16M words x 16 bits)
	EDS2532AABH-75	577Kb / 48P	256M bits SDRAM (8M words x 32 bits)

More results

EDD2508AKTA-5B Datasheet(PDF) 5 Page - Elpida Memory

EDD2508AKTA-5B Datasheet(HTML) 5 Page - Elpida Memory

Similar Part No. - EDD2508AKTA-5B

Similar Description - EDD2508AKTA-5B

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48

Datasheet Download

Link URL