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28LV010RT1FB25 Datasheet(PDF) 4 Page - Maxwell Technologies

Part # 28LV010RT1FB25
Description  3.3V 1 Megabit (128K x 8-Bit) EEPROM
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Manufacturer  MAXWELL [Maxwell Technologies]
Direct Link  http://www.maxwell.com
Logo MAXWELL - Maxwell Technologies

28LV010RT1FB25 Datasheet(HTML) 4 Page - Maxwell Technologies

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All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV010
03.14.03 REV 6
TABLE 7. 28LV010 AC CHARACTERISTICS FOR READ OPERATION1
(V
CC = 3.3V ± 10%, TA =-55 TO +125 ° C UNLESS OTHERWISE SPECIFIED)
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
PARAMETER
TEST CONDITIONS
SYMBOL
SUBGROUPS
MIN
MAX
UNIT
Address Access Time
-200
-250
CE =OE =V
IL,WE =VIH
t
ACC
9, 10, 11
--
--
200
250
ns
Chip Enable Access Time
-200
-250
OE =V
IL,WE =VIH
t
CE
9, 10, 11
--
--
200
250
ns
Output Enable Access Time
-200
-250
CE =V
IL,WE =VIH
t
OE
9, 10, 11
0
0
110
120
ns
Output Hold to Address Change
-200
-250
CE =OE =V
IL,WE =VIH
t
OH
9, 10, 11
0
0
--
--
ns
Output Disable to High-Z2
-200
-250
2. t
DF and tDFR is defined as the time at which the output becomes an open circuit and data is no longer driven.
CE =V
IL,WE =VIH
t
DF
9, 10, 11
0
0
50
50
ns
Output Disable to High-Z
-200
-250
CE =OE=V
IL,WE =VIH
t
DFR
9, 10, 11
0
0
300
350
ns
RES to Output Delay 3
-200
-250
3. Guaranteed by design.
CE =OE =V
IL
WE =V
IH
t
RR
9, 10, 11
0
0
525
600
ns


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