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MMSD4148T1G Datasheet(PDF) 2 Page - ON Semiconductor |
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MMSD4148T1G Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 4 page  MMSD4148T1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (IBR = 100 mAdc) V(BR) 100 − Vdc Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) IR − − 25 5.0 nAdc mAdc Forward Voltage (IF = 10 mAdc) VF − 1000 mVdc Diode Capacitance (VR = 0 Vdc, f = 1.0 MHz) CD − 4.0 pF Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr − 4.0 ns 1. A 2.0 k W variable resistor adjusted for a Forward Current (IF) of 10 mA. 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. 3. tp » trr +10 V 2 k 820 W 0.1 mF DUT VR 100 mH 0.1 mF 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE tr tp t 10% 90% IF IR trr t iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF INPUT SIGNAL Figure 1. Recovery Time Equivalent Test Circuit |
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