HM51S4260CLTT-6R datasheet(7/27 Pages) HITACHI

Part #	HM51S4260CLTT-6R

Description	262,144-word x 16-bit Dynamic Random Access Memory

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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HM514260C, HM51S4260C Series

7

DC Characteristics (Ta = 0 to 70

°C, V

CC = 5 V ±5%, VSS = 0 V) (HM51(S)4260C-6R)

(Ta = 0 to 70

°C, V

CC = 5 V ±10%, VSS = 0 V)

(HM51(S)4260C-6/7/8)

HM514260C, HM51S4260C

-6/-6R

-7

-8

Parameter

Symbol Min

Max Min

Max Unit

Test Conditions

Operating

current

*1, *2

I

CC1

—

150

—

140

—

125

mA

RAS, UCAS or LCAS cycling

t

RC = min

Standby current

I

CC2

—

2

—

2

—

2

mA

TTL interface

RAS, UCAS, LCAS = V

IH

Dout = High-Z

—

1

—

1

—

1

mA

CMOS interface

RAS, UCAS, LCAS, WE,

OE

≥ V

CC – 0.2 V

Dout = High-Z

Standby current

(L-version)

I

CC2

—

200

—

200

—

200

µA

CMOS interface

RAS, UCAS, LCAS, OE,

WE

≥ V

CC – 0.2 V

Dout = High-Z

RAS-only refresh

current

*2

I

CC3

—

140

—

130

—

110

mA

t

RC = min

Standby current

*1

I

CC5

—

5

—

5

—

5mA

RAS = V

IH, UCAS or LCAS = VIL

Dout = enable

CAS-before-RAS

refresh current

*2

I

CC6

—

140

—

130

—

110

mA

t

RC = min

Fast page mode

current

*1, *3

I

CC7

—

150

—

130

—

120

mA

t

PC = min

Battery backup

current

*4 (Standby

with CBR refresh)

(L-version)

I

CC10

—

300

—

300

—

300

µA

Standby: CMOS interface

Dout = High-Z

CBR refresh: t

RC = 250 µs

t

RAS ≤ 1 µs, UCAS, LCAS = VIL

WE, OE = V

IH

Self-refresh mode

current

(HM51S4260C)

I

CC11

—

1

—

1

—

1

mA

CMOS interface

RAS, UCAS, LCAS

≤ 0.2 V,

Dout = High-Z

Self-refresh mode

current

(HM51S4260CL)

I

CC11

—

200

—

200

—

200

µA

CMOS interface

RAS, UCAS, LCAS

≤ 0.2 V,

Dout = High-Z

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HM51S4260CLTT-6R Datasheet(PDF) 7 Page - Hitachi Semiconductor

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Similar Part No. - HM51S4260CLTT-6R

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