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9397 750 14912 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 May 2005 6 of 13 Philips Semiconductors PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package PESD3V3U1UT; PESD5V0U1UT IR is less than 10 nA at 150 °C for: PESD12VU1UT; PESD15VU1UT; PESD24VU1UT Fig 3. V-I characteristics Fig 4. Relative variation of reverse leakage current as a function of junction temperature; typical values 006aaa407 VCL VBR VRWM IRM IR IPP V I P-N − + 006aaa442 Tj (°C) −100 150 100 050 −50 1 10 10−1 IR IR(25˚C) |
