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74V1T77CTR Datasheet(PDF) 3 Page - STMicroelectronics |
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74V1T77CTR Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 10 page  74V1T77 3/10 DC SPECIFICATIONS AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns) (*) Voltage range is 5.0V ± 0.5V CAPACITIVE CHARACTERISTICS 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC Symbol Parameter Test Condition Value Unit VCC (V) TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. VIH High Level Input Voltage 4.5 to 5.5 22 2 V VIL Low Level Input Voltage 4.5 to 5.5 0.8 0.8 0.8 V VOH High Level Output Voltage 4.5 IO=-50 µA 4.4 4.5 4.4 4.4 V 4.5 IO=-8 mA 3.94 3.8 3.7 VOL Low Level Output Voltage 4.5 IO=50 µA 0.0 0.1 0.1 0.1 V 4.5 IO=8 mA 0.36 0.44 0.55 II Input Leakage Current 0 to 5.5 VI = 5.5V or GND ± 0.1 ± 1.0 ± 1.0 µA ICC Quiescent Supply Current 5.5 VI = VCC or GND 110 20 µA ICC Additional Worst Case Supply Current 5.5 One Input at 3.4V, other input at VCC or GND 1.35 1.5 1.5 mA Symbol Parameter Test Condition Value Unit VCC (V) CL (pF) TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. tPLH tPHL Propagation Delay Time LE to Q 5.0 (*) 15 4.4 6.5 1.0 7.5 1.0 8.5 ns 5.0 (*) 50 4.8 7.0 1.0 8.0 1.0 9.0 tPLH tPHL Propagation Delay Time D to Q 5.0 (*) 15 4.7 6.5 1.0 7.5 1.0 8.5 ns 5.0 (*) 50 5.3 7.0 1.0 8.0 1.0 9.0 tW LE Pulse Width, HIGH 5.0 (*) 3.0 3.0 3.0 ns ts Setup Time D to LE, HIGH or LOW 5.0 (*) 2.0 2.0 2.0 ns th Hold Time D to LE, HIGH or LOW 5.0 (*) 1.0 1.0 1.0 ns Symbol Parameter Test Condition Value Unit TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. CIN Input Capacitance 4 101010 pF CPD Power Dissipation Capacitance (note 1) 8pF |
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