AON5802 datasheet(4/4 Pages) AOSMD

Part #	AON5802

Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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AON5802

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0

1

2

3

4

5

6

7

8

9

10

0

4

8

1216

2024

Qg (nC)

Figure 7: Gate-Charge Characteristics

0

200

400

600

800

1000

1200

1400

1600

0

5

10

15

20

25

30

VDS (Volts)

Figure 8: Capacitance Characteristics

Ciss

0

40

80

120

160

200

0.0001 0.001

0.01

0.1

1

10

100

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Case (Note E)

0.01

0.1

1

10

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)

Coss

Crss

0.1

1.0

10.0

100.0

0.1

1

10

100

VDS (Volts)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

100µs

1ms

DC

RDS(ON)

limited

TJ(Max)=150°C, TA=25°C

10ms

100ms

1s

10s

VDS=15V

ID=8A

Single Pulse

D=Ton/T

TJ,PK=TC+PDM.ZθJC.RθJA

RθJA=75°C/W

Ton

T

PD

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

TJ(Max)=150°C

TA=25°C

10µs

Alpha & Omega Semiconductor, Ltd.

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