FDJ1032C datasheet(4/9 Pages) FAIRCHILD

Part #	FDJ1032C

Description	Complementary PowerTrench MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FDJ1032C Rev. B1(W)

Typical Characteristics : Q1

0

2

4

6

8

10

012

345

-V

DS, DRAIN TO SOURCE VOLTAGE (V)

V

GS=-4.5V

-3.0V

-3.5V

-1.8V

-2.5V

-2.0V

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

02

46

8

10

-I

D, DRAIN CURRENT (A)

V

GS=-1.8V

-3.0V

-3.5V

-4.5V

-4.0V

-2.5V

-2.0V

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

-50

-25

0

25

50

75

100

125

150

T

J, JUNCTION TEMPERATURE (°C)

I

D = -2.8A

V

GS = -4.5V

0.08

0.14

0.2

0.26

0.32

0.38

0.44

0.5

1.5

2

2.5

3

3.5

4

4.5

5

-VGS, GATE TO SOURCE VOLTAGE (V)

I

D = -1.4A

T

A = 125°C

T

A = 25°C

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0

1

2

3

4

5

0.5

1

1.5

2

2.5

-V

GS, GATE TO SOURCE VOLTAGE (V)

T

A = -55°C

25

°C

125

°C

V

DS = -5V

0.0001

0.001

0.01

0.1

1

10

100

0

0.2

0.4

0.6

0.8

1

1.2

-V

SD, BODY DIODE FORWARD VOLTAGE (V)

V

GS=0V

T

A = 125°C

25

°C

-55

°C

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

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