AS4C256K16E0-35JC datasheet(5/24 Pages) ALSC

Part #	AS4C256K16E0-35JC

Description	5V 256Kx16 CMOS DRAM (EDO)

Download	24 Pages

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Manufacturer	ALSC [Alliance Semiconductor Corporation]

Direct Link	https://www.alliancememory.com

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5 / 24 page

®

AS4C256K16E0

4/11/01; v.1.1

Alliance Semiconductor

5 of 24

Write cycle

Shaded areas contain advance information.

Read-modify-write cycle

Shaded areas contain advance information.

Std

Symbol

Parameter

-30

-35

-50

Unit

Notes

Min

Max

Min

Max

Min

Max

tASC

Column address setup time

0

–0

–

ns

tCAH

Column address hold time

5

–5

–9

–

ns

tAWR

Column address hold time to RAS

26

–28

–

30

–

ns

tWCS

Write command setup time

0

–0

–

ns

11

tWCH

Write command hold time

5

–5

–9

–

ns

11

tWCR

Write command hold time to RAS

26

–28

–

30

–

ns

tWP

Write command pulse width

5

–5

–9

–

ns

tRWL

Write command to RAS lead time

10

–11

–

12

–

ns

tCWL

Write command to CAS lead time

10

–11

–

12

–

ns

tDS

Data-in setup time

0

–0

–

ns

12

tDH

Data-in hold time

5

–5

–9

–

ns

12

tDHR

Data-in hold time to RAS

26

–28

–

30

–

ns

Std

Symbol

Parameter

-30

-35

-50

Unit

Notes

Min

Max

Min

Max

Min

Max

tRWC

Read-write cycle time

100

–

105

–

120

–

ns

tRWD

RAS

to WE delay time

50

–54–60

–

ns

11

tCWD

CAS

to WE delay time

26

–28–30

–

ns

11

tAWD

Column address to WE delay time

32

–35–40

–

ns

11

tRSH(W)

CAS

to RAS hold time (write)

10

–10–12

–

ns

tCAS(W)

CAS

pulse width (write)

15

–15–15

–

ns

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