128M GDDR SDRAM

K4D26323QG-GC

- 10 -

Rev 1.2(Mar. 2005)

Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

Note :

POWER & DC OPERATING CONDITIONS(SSTL In/Out)

°C)

Parameter

Symbol

Min

Typ

Max

Unit

Note

Device Supply voltage

1.7

1.8

1.9

V

1,8

Output Supply voltage

1.7

1.8

1.9

V

1,8

Reference voltage

-

V2

Termination voltage

Vtt

V

3

Input logic high voltage

-

V

4

Input logic low voltage

-0.30

-

V

5

Output logic high voltage

Vtt+0.76

-

-

V

Output logic low voltage

-

-

Vtt-0.76

V

Input leakage current

-5

-

5

uA

6

Output leakage current

-5

-

5

uA

6

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Voltage on any pin relative to Vss

-0.5 ~ 3.6

V

-1.0 ~ 3.6

V

-0.5 ~ 3.6

V

Storage temperature

-55 ~ +150

°C

Power dissipation

3.3

W

Short circuit current

50

mA

1. Under all conditions VDDQ must be less than or equal to VDD.

2. VREF is expected to equal 0.50*VDDQ of the transmitting device and to track variations in the DC level of the same. Peak to

peak noise on the VREF may not exceed + 2% of the DC value.

3. Vtt of the transmitting device must track VREF of the receiving device.

4. VIH(max.)= VDDQ +1.5V for a pulse width and it can not be greater than 1/3 of the cycle rate.

5. VIL(mim.)= -1.5V for a pulse width and it can not be greater than 1/3 of the cycle rate.

6. For any pin under test input of 0V < VIN < VDD is acceptable. For all other pins that are not under test VIN=0V.

7. Output logic high voltage and low voltage is depend on output channel condition.

8. For K4D26323QG-G(V)C22, VDD&VDDQ=2.0V+0.1V

Note :