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HPC-DEV-IBMA Datasheet(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # HPC-DEV-IBMA
Description  High-Performance Communications MicroController
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

HPC-DEV-IBMA Datasheet(HTML) 4 Page - National Semiconductor (TI)

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AC Electrical Characteristics (Continued)
CPU and DMA Timing (see Notes 1 and 4 and
Figures 2 4 6 7 8 and 9 ) VCC e 5V g10% TA e 0 Cto a70 C for
HPC46400E b40 Cto a85 C for HPC36400E
Symbol
Formula
Cycle
Parameter
Min
Max
Units
Note
t1ALR
CPU
Delay of ALE Rising Edge after CKI Rising Edge
0
35
ns
(Note 2)
DMA
Delay of ALE Rising Edge after CKI Falling Edge
0
35
ns
(Note 2)
t1ALF
CPU
Delay of ALE Falling Edge after CKI Rising Edge
0
35
ns
(Note 2)
DMA
Delay of ALE Falling Edge after CKI Falling Edge
0
35
ns
(Note 2)
t2ALR
tC a 20
CPU
ALE Rising Edge after CK2 Rising Edge
45
ns
t2ALF
tC a 20
CPU
ALE Falling Edge after CK2 Falling Edge
45
ns
tLL
tC b 9
ALE Pulse Width
41
ns
tST
tC b 20
Setup of Address Valid before ALE Falling Edge
5
ns
(Note 3)
tVP
tC b 10
CPU
Hold of Address Valid after ALE Falling Edge
15
ns
tC b 10
DMA
40
ns
tARR
tC b 20
ALE Falling Edge to RD Falling Edge
30
ns
tACC
tC a WS b 55
CPU
Data Input Valid after Address Output Valid
145
ns
tC a WS b 75
DMA
150
ns
tRD
tC a WS b 35
CPU
Data Input Valid after RD Falling Edge
90
ns
tC a WS
DMA
115
ns
tRW
tC a WS b 15
CPU
RD Pulse Width
110
ns
tC a WS b 15
DMA
135
ns
tDR
tC b 25
Hold of Data Input Valid after RD Rising Edge
0
50
ns
tRDA
tC b 20
Bus Enable after RD Rising Edge
55
ns
tARW
tC b 20
ALE Falling Edge to WR Falling Edge
30
ns
tWW
tCaWS b 15
CPU
WR Pulse Width
160
ns
tCaWS b 15
DMA
135
ns
tV
tC a WS b 40
CPU
Data Output Valid before WR Rising Edge
110
ns
tC a WS b 50
DMA
100
ns
tHW
tC b 10
Hold of Data Output Valid after WR Rising Edge
15
ns
(Note 5)
tRDYS
RDY Falling Edge before CK2 Rising Edge
45
ns
tRDYH
RDY Rising Edge after CK2 Rising Edge
0
ns
tRDYV
WS b
tC b 47
CPU
RDY Falling Edge after RD or WR Falling Edge
28
ns
(Note 6)
tC b 47
DMA
53
ns
Note 1
These AC characteristics are guaranteed with external clock drive on CKI having 50% duty cycle and with less than 15 pF load on CKO Spec’d tC1R tC1F
and CKI duty cycle limits are not tested but are guaranteed functional by design Keep in mind that when SLOW mode is selected fC (Operating Frequency) will be
the external frequency divided by 4 and that value should be used in all formulas relating to the AC Characteristics
Note 2
Do not design with this parameter unless CKI is driven with an active signal meeting TC1R and TC1F specs When using a passive crystal circuit its stability
is not guaranteed if either CKI or CKO is connected to any external logic other than the passive components of the crystal circuit
Note 3
Setup of HBE valid before ALE falling edge is 0 ns minimum Setup of BS0 thru BS3 valid before ALE falling edge when in extended addressing mode is
0 ns minimum
Note 4
WS (tWAIT) c (number of preprogrammed wait states) Minimum and maximum values are calculated at maximum operating frequency fC e 20 MHz with
one wait state preprogrammed These values are guaranteed with AC loading of 100 pF on Port A 50 pF on CK2 80 pF on other outputs and DC loading of the
pin’s DC spec non CMOS IOL or IOH
Note 5
Hold of HBE Output Valid after WR rising edge is 0 ns minimum Hold of BS0 thru BS3 Output Valid after WR rising edge when in extended addressing
mode is 0 ns minimum
Note 6
In HPC in-circuit emulators the tRDYV formulas are WS b
tC b 57 and tC b 57 yielding minimums of 18 ns and 43 ns for CPU and DMA cycles
respectively
4


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