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BS616LV1611FCP70 Datasheet(PDF) 2 Page - Brilliance Semiconductor |
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BS616LV1611FCP70 Datasheet(HTML) 2 Page - Brilliance Semiconductor |
2 / 8 page Revision 2.1 Jan. 2004 2 R0201-BS616LV1611 Name Function A0-A19 Address Input These 20 address inputs select one of the 1,048,576 x 16-bit words in the RAM. CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when data read from or write to the device. If either chip enable is not active, the device is deselected and is in a standby power mode. The DQ pins will be in the high impedance state when the device is deselected. WE Write Enable Input The write enable input is active LOW and controls read and write operations. With the chip selected, when WE is HIGH and OE is LOW, output data will be present on the DQ pins; when WE is LOW, the data present on the DQ pins will be written into the selected memory location. OE Output Enable Input The output enable input is active LOW. If the output enable is active while the chip is selected and the write enable is inactive, data will be present on the DQ pins and they will be enabled. The DQ pins will be in the high impedance state when OE is inactive. LB and UB Data Byte Control Input Lower byte and upper byte data input/output control pins. D0 - D15 Data Input/Output Ports These 16 bi-directional ports are used to read data from or write data into the RAM. Vcc Power Supply Vss Ground TRUTH TABLE PIN DESCRIPTIONS BSI BS616LV1611 MODE CE1 CE2 WE OE LB UB D0~D7 D8~D15 Vcc CURRENT H X X X X X High Z High Z ICCSB , ICCSB1 Not selected (Power Down) X L X X X X High Z High Z ICCSB , ICCSB1 Output Disabled L H H H X X High Z High Z ICC L L Dout Dout ICC H L High Z Dout ICC Read L H H L L H Dout High Z ICC LL Din Din ICC HL X Din ICC Write L H L X LH Din X ICC CIN Input Capacitance VIN=0V 10 pF CDQ Input/Output Capacitance VI/O=0V 12 pF RANGE AMBIENT TEMPERATURE Vcc Commercial 0 O C to +70O C 2.4V ~ 5.5V Industrial -40 O C to +85O C 2.4V ~ 5.5V ABSOLUTE MAXIMUM RATINGS(1) OPERATING RANGE CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz) 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 1. This parameter is guaranteed and not 100% tested. SYMBOL PARAMETER RATING UNITS VTERM Terminal Voltage with Respect to GND -0.5 to Vcc+0.5 V TBIAS Temperature Under Bias -40 to +85 O C TSTG Storage Temperature -60 to +150 O C PT Power Dissipation 1.0 W IOUT DC Output Current 20 mA SYMBOL PARAMETER CONDITIONS MAX. UNIT |
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