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BS616LV1015 Datasheet(PDF) 6 Page - Brilliance Semiconductor

Part # BS616LV1015
Description  Very Low Power/Voltage CMOS SRAM 64K X 16 bit
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Manufacturer  BSI [Brilliance Semiconductor]
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Logo BSI - Brilliance Semiconductor

BS616LV1015 Datasheet(HTML) 6 Page - Brilliance Semiconductor

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Revision 1.1
Jan.
2004
6
R0201-BS616LV1015
AC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC, Vcc = 5.0V )
WRITE CYCLE
BSI
BS616LV1015
JEDEC
PARAMETER
NAME
PARAMETER
NAME
DESCRIPTION
MIN. TYP. MAX.
UNIT
t
AVAX
t
WC
Write Cycle Time
55
--
--
ns
t
E1LWH
t
CW
Chip Select to End of Write
55
--
--
ns
t
AVWL
t
AS
Address Setup Time
0--
--
ns
t
AVWH
t
AW
Address Valid to End of Write
55
--
--
ns
t
WLWH
t
WP
Write Pulse Width
35
--
--
ns
t
WHAX
t
WR
Write recovery Time
(CE,WE)
0
--
--
ns
t
BW
t
BW
Date Byte Control to End of Write
(LB,UB)
55
--
--
ns
t
WLQZ
t
WHZ
Write to Output in High Z
--
--
25
ns
t
DVWH
t
DW
Data to Write Time Overlap
25
--
--
ns
t
WHDX
t
DH
Data Hold from Write Time
0--
--
ns
t
GHQZ
t
OHZ
Output Disable to Output in High Z
--
--
25
ns
t
WHOX
t
OW
End of Write to Output Active
5--
--
ns
t WR
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t WC
(3)
t CW
(10)
t BW
(2)
t WP
t AW
t OHZ
(4)
t AS
(3)
t DH
t DW
D
IN
D
OUT
WE
LB,UB
CE
OE
ADDRESS
(5)
CYCLE TIME : 55ns


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