M368L1713CTL-LB3 datasheet(5/12 Pages) SAMSUNG

Part #	M368L1713CTL-LB3

Description	128MB DDR SDRAM MODULE (16Mx64 based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity

Download	12 Pages

Scroll/Zoom	100%

Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

Logo

5 / 12 page

184pin Unbuffered DDR SDRAM MODULE

M368L1713CTL

Rev. 0.3 May. 2002

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Voltage on any pin relative to Vss

VIN, VOUT

-0.5 ~ 3.6

V

Voltage on VDD supply relative to Vss

VDD

-1.0 ~ 3.6

V

Voltage on VDDQ supply relative to Vss

VDDQ

-1.0 ~ 3.6

V

Storage temperature

TSTG

-55 ~ +150

°C

Power dissipation

PD

12

W

Short circuit current

IOS

50

mA

Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

Note :

POWER & DC OPERATING CONDITIONS (SSTL_2 In/Out)

Notes 1. Includes

± 25mV margin for DC offset on VREF, and a combined total of± 50mV margin for all AC noise and DC offset on V REF,

bandwidth limited to 20MHz. The DRAM must accommodate DRAM current spikes on V REF and internal DRAM noise coupled

TO VREF, both of which may result in V REF noise. VREF should be de-coupled with an inductance of

≤ 3nH.

2.VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to

VREF, and must track variations in the DC level of V REF

3. VID is the magnitude of the difference between the input level on CK and the input level on CK.

4. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in

simulation. The AC and DC input specifications are relative to a VREF envelop that has been bandwidth limited to 200MHZ.

5. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.

6. These charactericteristics obey the SSTL-2 class II standards.

Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70

°C)

Parameter

Symbol

Min

Max

Unit

Note

Supply voltage(for device with a nominal V DD of 2.5V)

VDD

2.3

2.7

I/O Supply voltage

VDDQ

2.3

2.7

V

I/O Reference voltage

VREF

VDDQ/2-50mV

VDDQ/2+50mV

V

1

I/O Termination voltage(system)

VTT

VREF-0.04

VREF+0.04

V

2

Input logic high voltage

VIH(DC)

VREF+0.15

VDDQ +0.3

V

4

Input logic low voltage

VIL(DC)

-0.3

VREF-0.15

V

4

Input Voltage Level, CK and CK inputs

VIN(DC)

-0.3

VDDQ +0.3

V

Input Differential Voltage, CK and CK inputs

VID(DC)

0.3

VDDQ +0.6

V

3

Input crossing point voltage, CK and CK inputs

VIX(DC)

1.15

1.35

V

5

Input leakage current

II

-2

2

uA

Output leakage current

IOZ

-5

5

uA

Output High Current(Normal strengh driver)

;VOUT = VTT + 0.84V

IOH

-16.8

mA

Output High Current(Normal strengh driver)

;VOUT = VTT - 0.84V

IOL

16.8

mA

Output High Current(Half strengh driver)

;VOUT = VTT + 0.45V

IOH

-9

mA

Output High Current(Half strengh driver)

;VOUT = VTT - 0.45V

IOL

9

mA

Similar Part No. - M368L1713CTL-LB3

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	M368L1624DTL	81Kb / 12P	16Mx64 DDR SDRAM 184pin DIMM based on 16Mx16
	M368L1624DTL-CLA2	81Kb / 12P	16Mx64 DDR SDRAM 184pin DIMM based on 16Mx16
	M368L1624DTL-CLB0	81Kb / 12P	16Mx64 DDR SDRAM 184pin DIMM based on 16Mx16
	M368L1624DTL-CLB3	81Kb / 12P	16Mx64 DDR SDRAM 184pin DIMM based on 16Mx16
	M368L1624DTM	354Kb / 22P	184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC

More results

Similar Description - M368L1713CTL-LB3

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	M368L3223CTL	83Kb / 12P	256MB DDR SDRAM MODULE Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
	M470L1714BT0	141Kb / 14P	128MB DDR SDRAM MODULE(16Mx64 based on 8Mx16 DDR SDRAM)
	M368L1624DTL	81Kb / 12P	16Mx64 DDR SDRAM 184pin DIMM based on 16Mx16
White Electronic Design...	WED3EG6417S-D4	451Kb / 7P	128MB - 16Mx64 DDR SDRAM UNBUFFERED
White Electronic Design...	W3EG6418S-D3	205Kb / 12P	128MB - 16Mx64 DDR SDRAM UNBUFFERED
Hanbit Electronics Co.,...	HDD16M72D9W	152Kb / 11P	DDR SDRAM Module 128Mbyte (16Mx72bit), based on 16Mx8, 4Banks 4K Ref., 184Pin-DIMM with Unbuffered ECC
Samsung semiconductor	M368L3313DTL	87Kb / 12P	256MB DDR SDRAM MODULE (32Mx64(16Mx64*2 bank) based on 16Mx8 DDR SDRAM)
Elpida Memory	EBD12UB8ALF	167Kb / 16P	128MB Unbuffered DDR SDRAM DIMM
White Electronic Design...	WED3EG6418S-D4	81Kb / 7P	128MB- 16Mx64 DDR SDRAM UNBUFFERED W/PLL
Samsung semiconductor	M368L3324BT	464Kb / 25P	DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II

More results

M368L1713CTL-LB3 Datasheet(PDF) 5 Page - Samsung semiconductor

M368L1713CTL-LB3 Datasheet(HTML) 5 Page - Samsung semiconductor

Similar Part No. - M368L1713CTL-LB3

Similar Description - M368L1713CTL-LB3

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL