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IXTA2N80 Datasheet(PDF) 2 Page - IXYS Corporation |
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IXTA2N80 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 2 page 2 - 2 © 2000 IXYS All rights reserved Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. g fs V DS = 20 V; I D = 0.5 • ID25, pulse test 1.0 2.0 S C iss 440 pF C oss V GS = 0 V, V DS = 25 V, f = 1 MHz 56 pF C rss 15 pF t d(on) 15 ns t r V GS = 10 V, V DS = 0.5 • VDSS, ID = 0.5 ID25 18 ns t d(off) R G = 18 Ω, (External) 30 ns t f 15 ns Q g(on) 22 nC Q gs V GS = 10 V, V DS = 0.5 • VDSS, ID = 0.5 ID25 5.5 nC Q gd 12 nC R thJC 2.3 K/W R thCK (IXTP) 0.5 K/W Source-Drain Diode Characteristic Values (T J = 25°C, unless otherwise specified) Symbol Test Conditions min. typ. max. I S V GS = 0 V 2 A I SM Repetitive; pulse width limited by T JM 8A V SD I F = I S, VGS = 0 V, 1.8 V Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr I F = I S, -di/dt = 100 A/µs, VR = 100 V 510 ns TO-263 AA (IXTA) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 7.11 8.13 .280 .320 E 9.65 10.29 .380 .405 E1 6.86 8.13 .270 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.38 0 .015 R 0.46 0.74 .018 .029 TO-220 AB (IXTP) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 12.70 13.97 0.500 0.550 B 14.73 16.00 0.580 0.630 C 9.91 10.66 0.390 0.420 D 3.54 4.08 0.139 0.161 E 5.85 6.85 0.230 0.270 F 2.54 3.18 0.100 0.125 G 1.15 1.65 0.045 0.065 H 2.79 5.84 0.110 0.230 J 0.64 1.01 0.025 0.040 K 2.54 BSC 0.100 BSC M 4.32 4.82 0.170 0.190 N 1.14 1.39 0.045 0.055 Q 0.35 0.56 0.014 0.022 R 2.29 2.79 0.090 0.110 IXTA 2N80 IXTP 2N80 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 |
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