NSS20201MR6 datasheet(1/4 Pages) ONSEMI

Part #	NSS20201MR6

Description	20 V, 3 A, Low VCE(sat) NPN Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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June, 2005 − Rev. P1

1

Publication Order Number:

NSS20201MR6/D

NSS20201MR6T1G

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20 V, 3 A, Low VCE(sat)

NPN Transistor

ON Semiconductor’s e2PowerEdge family of low VCE(sat)

transistors are miniature surface mount devices featuring ultra low

saturation voltage (VCE(sat)) and high current gain capability. These

are designed for use in low voltage, high speed switching applications

where affordable efficient energy control is important.

Typical application are DC−DC converters and power management

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e2PowerEdge devices to be

driven directly from PMU’s control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

MAXIMUM RATINGS (TA = 25°C)

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

VCEO

20

V

Collector-Base Voltage

VCBO

40

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current − Continuous

IC

2.0

A

Collector Current − Peak

ICM

3.0

A

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

TA = 25°C

Derate above 25

°C

PD (Note 1)

535

4.3

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

RqJA (Note 1)

234

°C/W

Total Device Dissipation

TA = 25°C

Derate above 25

°C

PD (Note 2)

1.180

9.4

W

mW/

°C

Thermal Resistance,

Junction−to−Ambient

RqJA (Note 2)

106

°C/W

Thermal Resistance,

Junction−to−Lead #1

RqJL (Note 1)

RqJL (Note 2)

110

50

°C/W

Total Device Dissipation

(Single Pulse < 10 s)

PDsingle

(Note 2)

1.75

W

Junction and Storage

Temperature Range

TJ, Tstg

−55 to

+150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR− 4 with 1 oz and 3.9 mm2 of copper area.

2. FR− 4 with 1 oz and 645 mm2 of copper area.

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

Device

Package

Shipping†

ORDERING INFORMATION

NSS20201MR6T1G

TSOP−6

(Pb−Free)

CASE 318G

TSOP−6

STYLE 6

3000/Tape & Reel

DEVICE MARKING

4

5

6

3

2

1

COLLECTOR

1, 2, 5, 6

3

BASE

4

EMITTER

VS0

VS0= Specific Device Code

d

= Date Code

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

http://onsemi.com

20 VOLTS

3.0 AMPS

NPN LOW VCE(sat) TRANSISTOR

EQUIVALENT RDS(on) 100 mW

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