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NSS20201MR6 Datasheet(PDF) 1 Page - ON Semiconductor |
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NSS20201MR6 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2005 June, 2005 − Rev. P1 1 Publication Order Number: NSS20201MR6/D NSS20201MR6T1G Product Preview 20 V, 3 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO 20 V Collector-Base Voltage VCBO 40 V Emitter-Base Voltage VEBO 5.0 V Collector Current − Continuous IC 2.0 A Collector Current − Peak ICM 3.0 A THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25 °C PD (Note 1) 535 4.3 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 234 °C/W Total Device Dissipation TA = 25°C Derate above 25 °C PD (Note 2) 1.180 9.4 W mW/ °C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 106 °C/W Thermal Resistance, Junction−to−Lead #1 RqJL (Note 1) RqJL (Note 2) 110 50 °C/W °C/W Total Device Dissipation (Single Pulse < 10 s) PDsingle (Note 2) 1.75 W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR− 4 with 1 oz and 3.9 mm2 of copper area. 2. FR− 4 with 1 oz and 645 mm2 of copper area. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. Device Package Shipping† ORDERING INFORMATION NSS20201MR6T1G TSOP−6 (Pb−Free) CASE 318G TSOP−6 STYLE 6 3000/Tape & Reel DEVICE MARKING 4 5 6 3 2 1 COLLECTOR 1, 2, 5, 6 3 BASE 4 EMITTER VS0 VS0= Specific Device Code d = Date Code †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 20 VOLTS 3.0 AMPS NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 100 mW |
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